View source for 17822600. PASSIVATION FOR A VERTICAL TRANSFER GATE IN A PIXEL SENSOR simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)

=PASSIVATION FOR A VERTICAL TRANSFER GATE IN A PIXEL SENSOR=


==Organization Name==

[[:Category:Taiwan Semiconductor Manufacturing Company, Ltd.|Taiwan Semiconductor Manufacturing Company, Ltd.]]


[[Category:Taiwan Semiconductor Manufacturing Company, Ltd.]]

==Inventor(s)==

[[:Category:Yu-Hung Cheng of Tainan City (TW)|Yu-Hung Cheng of Tainan City (TW)]][[Category:Yu-Hung Cheng of Tainan City (TW)]]

[[:Category:Tzu-Jui Wang of Fengshan City (TW)|Tzu-Jui Wang of Fengshan City (TW)]][[Category:Tzu-Jui Wang of Fengshan City (TW)]]

[[:Category:Ching I. Li of Tainan (TW)|Ching I. Li of Tainan (TW)]][[Category:Ching I. Li of Tainan (TW)]]

==PASSIVATION FOR A VERTICAL TRANSFER GATE IN A PIXEL SENSOR - A simplified explanation of the abstract==


This abstract first appeared for US patent application 17822600 titled 'PASSIVATION FOR A VERTICAL TRANSFER GATE IN A PIXEL SENSOR

==Simplified Explanation==

- A boron layer is used as a passivation layer in a recess where a vertical transfer gate is to be formed.
- The recess is filled with a gate electrode of the vertical transfer gate over the passivation layer to form the vertical transfer gate.
- The passivation layer is formed in the recess by epitaxial growth.
- Epitaxy enables precise control over the profile, uniformity, and boron concentration in the passivation layer.
- Epitaxy may reduce the diffusion length of the passivation layer into the substrate of the pixel sensor, providing increased area in the pixel sensor for the photodiode.

== Potential Applications ==
- Semiconductor manufacturing
- Image sensors
- Photodetectors

== Problems Solved ==
- Precise control over passivation layer properties
- Reduction of diffusion length into the substrate
- Increased area for photodiode in pixel sensor

== Benefits ==
- Improved performance of vertical transfer gate
- Enhanced uniformity and profile control
- Increased area for photodiode in pixel sensor


==Original Abstract Submitted==

A boron (B) layer may be formed as a passivation layer in a recess in which a vertical transfer gate is to be formed. The recess may then be filled with a gate electrode of the vertical transfer gate over the passivation layer (and/or one or more intervening layers) to form the vertical transfer gate. The passivation layer may be formed in the recess by epitaxial growth. The use of epitaxy to grow the passivation layer enables precise control over the profile, uniformity, and boron concentration in the passivation layer. Moreover, the use of epitaxy to grow the passivation layer may reduce the diffusion length of the passivation layer into the substrate of the pixel sensor, which provides increased area in the pixel sensor for the photodiode.



[[Category:H01L27/146]]