17808561. MRAM DEVICE WITH SELF-ALIGNED BOTTOM ELECTRODES simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)

From WikiPatents
Jump to navigation Jump to search

MRAM DEVICE WITH SELF-ALIGNED BOTTOM ELECTRODES

Organization Name

INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor(s)

Oscar Van Der Straten of Guilderland Center NY (US)

Lisamarie White of Chapin SC (US)

Willie Lester Muchrison, Jr. of Troy NY (US)

Chih-Chao Yang of Glenmont NY (US)

MRAM DEVICE WITH SELF-ALIGNED BOTTOM ELECTRODES - A simplified explanation of the abstract

This abstract first appeared for US patent application 17808561 titled 'MRAM DEVICE WITH SELF-ALIGNED BOTTOM ELECTRODES

Simplified Explanation

The patent application describes a magnetic tunnel junction (MTJ) stack that includes a bottom electrode surrounded by an oxide layer. The bottom electrode and oxide layer are horizontally aligned. Additionally, a metal spacer below the bottom electrode is also surrounded by the oxide layer, with its upper and lower surfaces horizontally aligned with the oxide layer.

  • The MTJ stack includes a bottom electrode surrounded by an oxide layer.
  • The oxide layer is horizontally aligned with the upper surface of the bottom electrode.
  • A metal spacer below the bottom electrode is also surrounded by the oxide layer.
  • The upper and lower surfaces of the metal spacer are horizontally aligned with the oxide layer.
  • A metal layer is formed on the metal spacer and dielectric using a high-temperature deposition process, causing oxidation of the metal layer.

Potential Applications:

  • Magnetic tunnel junction (MTJ) stacks can be used in various electronic devices, such as magnetic random-access memory (MRAM) and magnetic sensors.
  • The described structure and process can enhance the performance and reliability of MTJ stacks in these devices.

Problems Solved:

  • The oxide layer surrounding the bottom electrode and metal spacer helps to improve the stability and performance of the MTJ stack.
  • The horizontal alignment of the surfaces ensures proper contact and reduces potential issues related to misalignment.

Benefits:

  • The described structure and process can lead to improved performance, stability, and reliability of MTJ stacks.
  • The use of the oxide layer and horizontal alignment helps to minimize potential issues and enhance the overall functionality of electronic devices utilizing MTJ stacks.


Original Abstract Submitted

A magnetic tunnel junction (MTJ) stack, where a vertical side surface of a bottom electrode of the MTJ stack is surrounded by an oxide, where the bottom electrode and the oxide are horizontally aligned. A magnetic tunnel junction (MTJ) stack, where a vertical side surface of a bottom electrode of the MTJ stack and a metal spacer below the bottom electrode is surrounded by an oxide, where an upper surface of the bottom electrode is horizontally aligned with a horizontal upper surface of the oxide, where a lower surface of the metal spacer is horizontally aligned with a horizontal lower surface of the oxide. Forming a metal spacer above and vertically aligned with a lower metal line surrounded by a dielectric, and forming a metal layer on the metal spacer and dielectric with a high temperature deposition of the metal layer, where the metal layer oxidizes.

Retrieved from "http://wikipatents.org/index.php?title=17808561._MRAM_DEVICE_WITH_SELF-ALIGNED_BOTTOM_ELECTRODES_simplified_abstract_(INTERNATIONAL_BUSINESS_MACHINES_CORPORATION)&oldid=17775"