View source for 17804851. METHOD OF SEARCHING READ VOLTAGE OF NONVOLATILE MEMORY DEVICE USING REGRESSION ANALYSIS AND METHOD OF READING DATA FROM NONVOLATILE MEMORY DEVICE USING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)

=METHOD OF SEARCHING READ VOLTAGE OF NONVOLATILE MEMORY DEVICE USING REGRESSION ANALYSIS AND METHOD OF READING DATA FROM NONVOLATILE MEMORY DEVICE USING THE SAME=


==Organization Name==

[[:Category:Samsung Electronics Co., Ltd.|Samsung Electronics Co., Ltd.]]


[[Category:Samsung Electronics Co., Ltd.]]

==Inventor(s)==

[[:Category:WIJIK Lee of SUWON-SI (KR)|WIJIK Lee of SUWON-SI (KR)]][[Category:WIJIK Lee of SUWON-SI (KR)]]

[[:Category:KWANWOO Noh of HWASEONG-SI (KR)|KWANWOO Noh of HWASEONG-SI (KR)]][[Category:KWANWOO Noh of HWASEONG-SI (KR)]]

[[:Category:HYEONJONG Song of SUWON-SI (KR)|HYEONJONG Song of SUWON-SI (KR)]][[Category:HYEONJONG Song of SUWON-SI (KR)]]

==METHOD OF SEARCHING READ VOLTAGE OF NONVOLATILE MEMORY DEVICE USING REGRESSION ANALYSIS AND METHOD OF READING DATA FROM NONVOLATILE MEMORY DEVICE USING THE SAME - A simplified explanation of the abstract==


This abstract first appeared for US patent application 17804851 titled 'METHOD OF SEARCHING READ VOLTAGE OF NONVOLATILE MEMORY DEVICE USING REGRESSION ANALYSIS AND METHOD OF READING DATA FROM NONVOLATILE MEMORY DEVICE USING THE SAME

==Simplified Explanation==

The abstract describes a nonvolatile memory device and a method for searching a read voltage in this device. Here are the key points:

* The nonvolatile memory device has memory cells that can be in two different states.
* The method involves determining the number of data read operations to be performed (represented by n).
* N read voltage levels are selected, each level being different from the others, and equal to the number of data read operations.
* N data read operations are performed on the memory cells using all of the selected read voltage levels, generating n cell count values.
* An optimal read voltage level is generated by performing a regression analysis using the n read voltage levels and the n cell count values.

== Potential Applications ==
* Nonvolatile memory devices can be used in various electronic devices, such as computers, smartphones, and IoT devices.
* This method can improve the efficiency and accuracy of data read operations in nonvolatile memory devices.

== Problems Solved ==
* Nonvolatile memory devices often require efficient methods for searching optimal read voltage levels.
* The method described in the patent application solves the problem of determining the optimal read voltage level by performing a regression analysis.

== Benefits ==
* The method allows for the determination of an optimal read voltage level, improving the performance of nonvolatile memory devices.
* By using a regression analysis, the method provides a more accurate and reliable way to search for the optimal read voltage level.


==Original Abstract Submitted==

A nonvolatile memory device includes a plurality of memory cells that have a first state and a second state different from each other. A method of searching a read voltage of the nonvolatile memory device includes determining a number n that represents a number of times a data read operation is performed, selecting n read voltage levels of the read voltage such that a number of read voltage levels is equal to the number of times the data read operation, where the n read voltage levels differ from each other, generating n cell count values by performing n data read operations on the plurality of memory cells using all of the n read voltage levels, and generating an optimal read voltage level of the read voltage by performing a regression analysis based on a first-order polynomial using the n read voltage levels and the n cell count values.



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