17751898. MAGNETORESISTIVE RANDOM ACCESS MEMORY DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
Contents
MAGNETORESISTIVE RANDOM ACCESS MEMORY DEVICE
Organization Name
Inventor(s)
MAGNETORESISTIVE RANDOM ACCESS MEMORY DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 17751898 titled 'MAGNETORESISTIVE RANDOM ACCESS MEMORY DEVICE
Simplified Explanation
The abstract describes a patent application for a magneto resistive random access memory (MRAM) device that includes a spin orbit torque structure and a magnetic tunnel junction (MTJ) structure. The spin orbit torque structure consists of an oxide layer pattern, a ferromagnetic pattern, and a non-magnetic pattern. The MTJ structure consists of a free layer pattern, a tunnel barrier pattern, and a pinned layer pattern. The spin orbit torque structure extends in a first direction parallel to the upper surface of the device, while the free layer pattern has a magnetization direction in a vertical direction perpendicular to the upper surface. The magnetization direction of the free layer pattern can be changed by spin currents generated in the spin orbit torque structure.
- The MRAM device includes a spin orbit torque structure and a magnetic tunnel junction (MTJ) structure.
- The spin orbit torque structure consists of an oxide layer pattern, a ferromagnetic pattern, and a non-magnetic pattern.
- The MTJ structure consists of a free layer pattern, a tunnel barrier pattern, and a pinned layer pattern.
- The spin orbit torque structure extends parallel to the upper surface of the device.
- The ferromagnetic pattern contains a horizontal magnetic material.
- The free layer pattern has a magnetization direction in a vertical direction perpendicular to the upper surface.
- The magnetization direction of the free layer pattern can be changed by spin currents generated in the spin orbit torque structure.
Potential Applications
- MRAM devices can be used in various electronic devices, such as computers, smartphones, and IoT devices.
- The ability to change the magnetization direction of the free layer pattern allows for data storage and retrieval in MRAM devices.
Problems Solved
- Traditional MRAM devices have limitations in terms of speed, density, and power consumption.
- The spin orbit torque structure in this patent application addresses these limitations by enabling efficient magnetization direction changes.
Benefits
- The use of spin orbit torque structure allows for faster and more efficient data storage and retrieval in MRAM devices.
- The ability to change the magnetization direction of the free layer pattern provides flexibility in data manipulation.
- The MRAM device described in the patent application has the potential to overcome the limitations of traditional MRAM devices.
Original Abstract Submitted
A magneto resistive random access memory (MRAM) device including a spin orbit torque structure including a stack of an oxide layer pattern, a ferromagnetic pattern, and a non-magnetic pattern; and a magnetic tunnel junction (MTJ) structure on the spin orbit torque structure, the MTJ structure including a stack of a free layer pattern, a tunnel barrier pattern, and a pinned layer pattern, wherein the spin orbit torque structure extends in a first direction parallel to an upper surface of the spin orbit torque structure, the ferromagnetic pattern includes a horizontal magnetic material, and the free layer pattern has a magnetization direction in a vertical direction perpendicular to the upper surface of the spin orbit torque structure, the magnetization direction being changeable in response to spin currents generated in the spin orbit torque structure.
