17750653. PLASMA ETCHING APPARATUS AND METHOD FOR OPERATING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
Contents
PLASMA ETCHING APPARATUS AND METHOD FOR OPERATING THE SAME
Organization Name
Inventor(s)
Nam Kyun Kim of Pyeongtaek-si (KR)
PLASMA ETCHING APPARATUS AND METHOD FOR OPERATING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 17750653 titled 'PLASMA ETCHING APPARATUS AND METHOD FOR OPERATING THE SAME
Simplified Explanation
The abstract describes a plasma etching apparatus that includes various components and a controller. The controller is responsible for supplying different types of RF power to the chamber at specific times during the etching process.
- The apparatus includes a first source electrode, a first bias electrode, and a second bias electrode that generate a plasma by supplying energy to a process gas in the chamber.
- The controller supplies a first high-frequency RF power, a first low-frequency RF power, and a second low-frequency RF power to the chamber during a specific period of time.
- The first high-frequency RF power is ramped down and turned off during a second period of time.
- The first low-frequency RF power is also ramped down and turned off during a third period of time, which is smaller than half of the first period and different from the second period.
Potential applications of this technology:
- Semiconductor manufacturing: Plasma etching is commonly used in the fabrication of integrated circuits and other semiconductor devices.
- Nanofabrication: This technology can be applied in the creation of nanoscale structures and devices.
- Surface modification: Plasma etching can be used to modify the surface properties of materials, such as improving adhesion or creating hydrophobic surfaces.
Problems solved by this technology:
- Precise control: The controller allows for precise control of the RF power supplied to the chamber, enabling more accurate and controlled etching processes.
- Uniformity: By carefully adjusting the RF power during different periods, the technology helps achieve more uniform etching across the entire surface.
- Efficiency: The ability to ramp down and turn off specific RF powers at different times can improve the overall efficiency of the plasma etching process.
Benefits of this technology:
- Improved etching results: The precise control and uniformity provided by this technology can lead to better etching results, with more accurate and consistent patterns.
- Time and cost savings: The efficient use of RF power and the ability to control different frequencies at different times can help reduce process time and costs.
- Enhanced process flexibility: The ability to adjust and control RF power during different periods allows for greater flexibility in the etching process, accommodating different materials and requirements.
Original Abstract Submitted
A plasma etching apparatus may include a first source electrode, a first bias electrode, and a second bias electrode configured to generate a plasma by supplying energy to a process gas injected into a chamber; and a controller. The controller may be configured to supply a first high-frequency RF power, a first low-frequency RF power, and a second low-frequency RF power to the chamber during a first period from a first time to a second time; ramp down and turn off the first high-frequency RF power to the chamber during a second period from the second time to a third time; and ramp down and turn off the first low-frequency RF power to the chamber during a third period from the second time to a fourth time different from the third time. The third period may be smaller than ½ of the first period and greater than the second period.
