View source for 17750653. PLASMA ETCHING APPARATUS AND METHOD FOR OPERATING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)

=PLASMA ETCHING APPARATUS AND METHOD FOR OPERATING THE SAME=


==Organization Name==

[[:Category:Samsung Electronics Co., Ltd.|Samsung Electronics Co., Ltd.]]


[[Category:Samsung Electronics Co., Ltd.]]

==Inventor(s)==

[[:Category:Nam Kyun Kim of Pyeongtaek-si (KR)|Nam Kyun Kim of Pyeongtaek-si (KR)]][[Category:Nam Kyun Kim of Pyeongtaek-si (KR)]]

[[:Category:Seung Bo Shim of Seoul (KR)|Seung Bo Shim of Seoul (KR)]][[Category:Seung Bo Shim of Seoul (KR)]]

[[:Category:Doug Yong Sung of Seoul (KR)|Doug Yong Sung of Seoul (KR)]][[Category:Doug Yong Sung of Seoul (KR)]]

[[:Category:Seung Han Baek of Busan (KR)|Seung Han Baek of Busan (KR)]][[Category:Seung Han Baek of Busan (KR)]]

[[:Category:Ju Ho Lee of Suwon-si (KR)|Ju Ho Lee of Suwon-si (KR)]][[Category:Ju Ho Lee of Suwon-si (KR)]]

==PLASMA ETCHING APPARATUS AND METHOD FOR OPERATING THE SAME - A simplified explanation of the abstract==


This abstract first appeared for US patent application 17750653 titled 'PLASMA ETCHING APPARATUS AND METHOD FOR OPERATING THE SAME

==Simplified Explanation==

The abstract describes a plasma etching apparatus that includes various components and a controller. The controller is responsible for supplying different types of RF power to the chamber at specific times during the etching process.

* The apparatus includes a first source electrode, a first bias electrode, and a second bias electrode that generate a plasma by supplying energy to a process gas in the chamber.
* The controller supplies a first high-frequency RF power, a first low-frequency RF power, and a second low-frequency RF power to the chamber during a specific period of time.
* The first high-frequency RF power is ramped down and turned off during a second period of time.
* The first low-frequency RF power is also ramped down and turned off during a third period of time, which is smaller than half of the first period and different from the second period.

Potential applications of this technology:

* Semiconductor manufacturing: Plasma etching is commonly used in the fabrication of integrated circuits and other semiconductor devices.
* Nanofabrication: This technology can be applied in the creation of nanoscale structures and devices.
* Surface modification: Plasma etching can be used to modify the surface properties of materials, such as improving adhesion or creating hydrophobic surfaces.

Problems solved by this technology:

* Precise control: The controller allows for precise control of the RF power supplied to the chamber, enabling more accurate and controlled etching processes.
* Uniformity: By carefully adjusting the RF power during different periods, the technology helps achieve more uniform etching across the entire surface.
* Efficiency: The ability to ramp down and turn off specific RF powers at different times can improve the overall efficiency of the plasma etching process.

Benefits of this technology:

* Improved etching results: The precise control and uniformity provided by this technology can lead to better etching results, with more accurate and consistent patterns.
* Time and cost savings: The efficient use of RF power and the ability to control different frequencies at different times can help reduce process time and costs.
* Enhanced process flexibility: The ability to adjust and control RF power during different periods allows for greater flexibility in the etching process, accommodating different materials and requirements.


==Original Abstract Submitted==

A plasma etching apparatus may include a first source electrode, a first bias electrode, and a second bias electrode configured to generate a plasma by supplying energy to a process gas injected into a chamber; and a controller. The controller may be configured to supply a first high-frequency RF power, a first low-frequency RF power, and a second low-frequency RF power to the chamber during a first period from a first time to a second time; ramp down and turn off the first high-frequency RF power to the chamber during a second period from the second time to a third time; and ramp down and turn off the first low-frequency RF power to the chamber during a third period from the second time to a fourth time different from the third time. The third period may be smaller than ½ of the first period and greater than the second period.



[[Category:H01J37/32]]