17748869. METHOD FOR MANUFACTURING SEMICONDUCTOR STRUCTURE WITH SINGLE SIDE CAPACITOR simplified abstract (NANYA TECHNOLOGY CORPORATION)
Contents
METHOD FOR MANUFACTURING SEMICONDUCTOR STRUCTURE WITH SINGLE SIDE CAPACITOR
Organization Name
Inventor(s)
YU-MIN Chou of KEELUNG CITY (TW)
SHIH-FAN Kuan of TAOYUAN CITY (TW)
METHOD FOR MANUFACTURING SEMICONDUCTOR STRUCTURE WITH SINGLE SIDE CAPACITOR - A simplified explanation of the abstract
This abstract first appeared for US patent application 17748869 titled 'METHOD FOR MANUFACTURING SEMICONDUCTOR STRUCTURE WITH SINGLE SIDE CAPACITOR
Simplified Explanation
The present disclosure describes a method for manufacturing a semiconductor structure. The method involves several steps, including the formation of multiple layers over a substrate, the creation of openings to expose landing pads in the substrate, the formation of electrodes in the openings, the removal of sacrificial layers, and the formation of a conductive layer.
- The method begins with the provision of a substrate.
- Multiple layers, including nitride layers and sacrificial layers, are formed over the substrate in a specific sequence.
- Openings are created to expose landing pads in the substrate.
- Electrodes are formed in the openings.
- The sacrificial layers are removed simultaneously.
- A conductive layer is formed, which conforms to the electrodes and the various nitride layers.
Potential applications of this technology:
- Semiconductor manufacturing industry
- Electronics industry
- Integrated circuit production
Problems solved by this technology:
- Simplifies the manufacturing process of semiconductor structures
- Provides a method for forming electrodes and a conductive layer in a precise and efficient manner
Benefits of this technology:
- Improved manufacturing efficiency
- Enhanced precision in the formation of electrodes and conductive layers
- Simplified manufacturing process for semiconductor structures
Original Abstract Submitted
The present disclosure provides a method of manufacturing a semiconductor structure. The method includes: providing a substrate; forming a first nitride layer, a first sacrificial layer, a second nitride layer, a second sacrificial layer and a third nitride layer in sequence over the substrate; forming a first opening and a second opening, wherein the first opening exposes a first landing pad in the substrate, and the second opening exposes a second landing pad in the substrate; forming a first electrode in the first opening and a second electrode in the second opening; removing the first sacrificial layer and the second sacrificial layer concurrently; and forming a conductive layer, conformal to the first electrode, the second electrode, the first nitride layer, the second nitride layer and the third nitride layer.
