View source for 17734455. MAGNETIC TUNNEL JUNCTION DEVICE AND STOCHASTIC COMPUTING SYSTEM INCLUDING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)

=MAGNETIC TUNNEL JUNCTION DEVICE AND STOCHASTIC COMPUTING SYSTEM INCLUDING THE SAME=


==Organization Name==

[[:Category:SAMSUNG ELECTRONICS CO., LTD.|SAMSUNG ELECTRONICS CO., LTD.]]


[[Category:SAMSUNG ELECTRONICS CO., LTD.]]

==Inventor(s)==

[[:Category:Sung Chul Lee of Osan-si (KR)|Sung Chul Lee of Osan-si (KR)]][[Category:Sung Chul Lee of Osan-si (KR)]]

[[:Category:Kwang Seok Kim of Seoul (KR)|Kwang Seok Kim of Seoul (KR)]][[Category:Kwang Seok Kim of Seoul (KR)]]

[[:Category:Jeong-Heon Park of Hwaseong-si (KR)|Jeong-Heon Park of Hwaseong-si (KR)]][[Category:Jeong-Heon Park of Hwaseong-si (KR)]]

==MAGNETIC TUNNEL JUNCTION DEVICE AND STOCHASTIC COMPUTING SYSTEM INCLUDING THE SAME - A simplified explanation of the abstract==


This abstract first appeared for US patent application 17734455 titled 'MAGNETIC TUNNEL JUNCTION DEVICE AND STOCHASTIC COMPUTING SYSTEM INCLUDING THE SAME

==Simplified Explanation==

The abstract describes a magnetic tunnel junction device that consists of a pinned magnetic layer, a free magnetic layer, and a tunnel barrier layer between them. The free magnetic layer includes two layers separated by a spacer layer, and both layers are antiferromagnetically coupled to each other. The magnetization direction of each layer is perpendicular to the interface with the tunnel barrier layer. The thermal stability of the free magnetic layer is within the range of 0 to 15.

* The device is a magnetic tunnel junction, which is a key component in magnetic random-access memory (MRAM) technology.
* It includes a pinned magnetic layer, a free magnetic layer, and a tunnel barrier layer.
* The free magnetic layer consists of two layers separated by a spacer layer.
* The two layers in the free magnetic layer are antiferromagnetically coupled to each other.
* The magnetization direction of each layer is perpendicular to the interface with the tunnel barrier layer.
* The thermal stability of the free magnetic layer is limited to a range of 0 to 15.

==Potential Applications==
* Magnetic random-access memory (MRAM) technology
* Non-volatile memory devices
* High-density data storage

==Problems Solved==
* Enhances the thermal stability of the free magnetic layer in a magnetic tunnel junction device.
* Improves the reliability and performance of MRAM technology.
* Reduces the risk of data loss or corruption due to thermal effects.

==Benefits==
* Increased thermal stability allows for more reliable and durable MRAM devices.
* Enables the development of high-density data storage solutions.
* Provides a more efficient and stable platform for non-volatile memory applications.


==Original Abstract Submitted==

A magnetic tunnel junction device includes a pinned magnetic layer, a free magnetic layer, and a tunnel barrier layer between the pinned and free magnetic layers. The free magnetic layer includes a first free layer, a second free layer spaced apart from the tunnel barrier layer with the first free layer therebetween, and a spacer layer between the first free layer and the second free layer. The first free layer and the second free layer are antiferromagnetically coupled to each other by the spacer layer, and each of the first free layer and the second free layer has a magnetization direction substantially perpendicular to an interface between the free magnetic layer and the tunnel barrier layer. A thermal stability of the free magnetic layer is in a range of 0 to 15.



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