View source for 17731615. SEMICONDUCTOR DEVICES HAVING STRESSED ACTIVE REGIONS THEREIN THAT SUPPORT ENHANCED CARRIER MOBILITY simplified abstract (Samsung Electronics Co., Ltd.)

=SEMICONDUCTOR DEVICES HAVING STRESSED ACTIVE REGIONS THEREIN THAT SUPPORT ENHANCED CARRIER MOBILITY=


==Organization Name==

[[:Category:Samsung Electronics Co., Ltd.|Samsung Electronics Co., Ltd.]]


[[Category:Samsung Electronics Co., Ltd.]]

==Inventor(s)==

[[:Category:Woo-Bin Song of Hwaseong-si (KR)|Woo-Bin Song of Hwaseong-si (KR)]][[Category:Woo-Bin Song of Hwaseong-si (KR)]]

==SEMICONDUCTOR DEVICES HAVING STRESSED ACTIVE REGIONS THEREIN THAT SUPPORT ENHANCED CARRIER MOBILITY - A simplified explanation of the abstract==


This abstract first appeared for US patent application 17731615 titled 'SEMICONDUCTOR DEVICES HAVING STRESSED ACTIVE REGIONS THEREIN THAT SUPPORT ENHANCED CARRIER MOBILITY

==Simplified Explanation==

The patent application describes a semiconductor device that includes a substrate, insulating layers, source and drain patterns, and a channel layer with a transition metal.
* The device includes a substrate, which serves as a base for the other components.
* A first insulating layer is applied on the substrate.
* Source and drain patterns are placed on the first insulating layer, with a gap between them.
* A channel layer, containing a transition metal dichalcogenide, is deposited on the first insulating layer and between the source and drain patterns.
* A second insulating layer is added on top of the channel layer, with a thickness smaller than the first insulating layer.
* A gate structure is formed on the second insulating layer, opposite the channel layer.
* The channel layer may consist of materials like MoS, WS, MoSe, WSe, MoSe, WTe, and ZrSe.

Potential applications of this technology:
* The semiconductor device can be used in electronic devices such as transistors and integrated circuits.
* It may find applications in the field of optoelectronics, where it can be used in devices like photodetectors and light-emitting diodes.
* The technology can be utilized in the development of sensors for various applications, including environmental monitoring and healthcare.

Problems solved by this technology:
* The use of a transition metal dichalcogenide in the channel layer provides improved performance and efficiency compared to traditional semiconductor materials.
* The inclusion of insulating layers helps in reducing leakage currents and improving device reliability.
* The design allows for better control of the electrical properties of the device, leading to enhanced functionality.

Benefits of this technology:
* The semiconductor device offers improved performance and efficiency.
* It allows for miniaturization and integration of multiple components on a single chip.
* The technology enables the development of more advanced and versatile electronic devices.
* The use of transition metal dichalcogenides provides unique optical and electrical properties, expanding the range of possible applications.


==Original Abstract Submitted==

A semiconductor device includes a substrate, a first insulating layer on the substrate, source and drain patterns at spaced-apart locations on the first insulating layer, and a channel layer having a transition metal therein, such as a transition metal dichalcogenide. The channel layer extends on the first insulating layer and between the source and drain patterns. A second insulating layer is also provided, which extends on the channel layer and has a thickness less than a thickness of the first insulating layer. A gate structure is provided, which extends on the second insulating layer, and opposite the channel layer. The channel layer may include at least one of MoS, WS, MoSe, WSe, MoSe, WTe, and ZrSe.



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