View source for 17729477. SEMICONDUCTOR DEVICE, SEMICONDUCTOR MEMORY DEVICE INCLUDING THE SAME, ELECTRONIC SYSTEM INCLUDING THE SAME, AND METHOD FOR FABRICATING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)

=SEMICONDUCTOR DEVICE, SEMICONDUCTOR MEMORY DEVICE INCLUDING THE SAME, ELECTRONIC SYSTEM INCLUDING THE SAME, AND METHOD FOR FABRICATING THE SAME=


==Organization Name==

[[:Category:Samsung Electronics Co., Ltd.|Samsung Electronics Co., Ltd.]]


[[Category:Samsung Electronics Co., Ltd.]]

==Inventor(s)==

[[:Category:Ju Seong Min of Seoul (KR)|Ju Seong Min of Seoul (KR)]][[Category:Ju Seong Min of Seoul (KR)]]

[[:Category:Jae-Bok Baek of Osan-si (KR)|Jae-Bok Baek of Osan-si (KR)]][[Category:Jae-Bok Baek of Osan-si (KR)]]

[[:Category:Jee Hoon Han of Hwaseong-si (KR)|Jee Hoon Han of Hwaseong-si (KR)]][[Category:Jee Hoon Han of Hwaseong-si (KR)]]

==SEMICONDUCTOR DEVICE, SEMICONDUCTOR MEMORY DEVICE INCLUDING THE SAME, ELECTRONIC SYSTEM INCLUDING THE SAME, AND METHOD FOR FABRICATING THE SAME - A simplified explanation of the abstract==


This abstract first appeared for US patent application 17729477 titled 'SEMICONDUCTOR DEVICE, SEMICONDUCTOR MEMORY DEVICE INCLUDING THE SAME, ELECTRONIC SYSTEM INCLUDING THE SAME, AND METHOD FOR FABRICATING THE SAME

==Simplified Explanation==

The patent application describes a semiconductor device that includes various insulating films and wiring structures on a substrate. The device includes a lower insulating film with two trenches, each containing a wiring structure. A capping insulating film is placed on top, which has an insulating recess portion in one trench and an insulating liner portion along the lower insulating film's surface. An upper insulating film is then added, followed by an upper contact that connects to one of the wiring structures.

* The lower insulating film has two trenches with wiring structures.
* The capping insulating film has an insulating recess portion in one trench and an insulating liner portion along the lower insulating film's surface.
* The upper contact penetrates the capping insulating film and connects to one of the wiring structures.
* The upper contact includes a contact recess portion, an extended portion, and a plug portion within the upper insulating film.
* The extended portion of the upper contact has a greater width than the plug portion.

Potential applications of this technology:

* Semiconductor manufacturing
* Integrated circuit design
* Electronics industry

Problems solved by this technology:

* Provides a structure for connecting wiring structures in a semiconductor device.
* Helps in reducing signal interference and improving device performance.

Benefits of this technology:

* Simplifies the manufacturing process of semiconductor devices.
* Enhances the reliability and functionality of the device.
* Reduces signal loss and interference.


==Original Abstract Submitted==

A semiconductor device includes a lower insulating film that includes a first and second trenches on a substrate, a first wiring in the first trench, a second wiring in the second trench, a capping insulating film including an insulating recess portion and an insulating liner portion, an upper insulating film on the capping insulating film, and an upper contact that penetrates the capping insulating film and connects to the first wiring, The insulating recess portion is in the second trench and the insulating liner portion extends along an upper surface of the lower insulating film. The upper contact includes a contact recess portion in the first trench, an extended portion connected to the contact recess portion, and a plug portion connected to the extended portion inside the upper insulating film. A width of the extended portion is greater than a width of the plug portion.



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