17723845. MAGNETIC MEMORY DEVICE simplified abstract (Samsung Electronics Co., Ltd.)

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MAGNETIC MEMORY DEVICE

Organization Name

Samsung Electronics Co., Ltd.

Inventor(s)

Byongguk Park of Daejeon (KR)

Jeong-Heon Park of Hwaseong-si (KR)

Kyung-Jin Lee of Daejeon (KR)

Jeongchun Ryu of Daejeon (KR)

MAGNETIC MEMORY DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 17723845 titled 'MAGNETIC MEMORY DEVICE

Simplified Explanation

The abstract describes a magnetic memory device that includes a conductive line, a magnetic tunnel junction structure, and a magnetic layer. The magnetic tunnel junction structure consists of magnetic patterns and a barrier pattern, while the magnetic layer has magnetization components parallel to its surface and intersecting the direction of the conductive line.

  • The magnetic memory device includes a conductive line, magnetic tunnel junction structure, and magnetic layer.
  • The magnetic tunnel junction structure comprises magnetic patterns and a barrier pattern.
  • The magnetic layer has magnetization components parallel to its surface and intersecting the direction of the conductive line.

Potential Applications

  • Data storage devices
  • Magnetic random-access memory (MRAM)
  • Magnetic sensors

Problems Solved

  • Provides a compact and efficient magnetic memory device
  • Enables high-speed data storage and retrieval
  • Enhances the performance of magnetic sensors

Benefits

  • Improved data storage capacity
  • Faster data access and retrieval
  • Reduced power consumption
  • Enhanced reliability and durability


Original Abstract Submitted

A magnetic memory device includes a conductive line extending in a first direction, a magnetic tunnel junction structure on a first surface of the conductive line, the magnetic tunnel junction structure comprising at least two magnetic patterns and a barrier pattern between the at least two magnetic patterns, and a magnetic layer on a second surface of the conductive line, which is opposite to the first surface. The magnetic layer includes magnetization components having a magnetization in a direction which is parallel to the second surface and intersects the first direction.