17721574. SEMICONDUCTOR DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
Contents
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Sunghoon Kim of Seongnam-si (KR)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 17721574 titled 'SEMICONDUCTOR DEVICE
Simplified Explanation
The patent application describes a semiconductor device that consists of a cell region and a peripheral circuit region. The cell region includes gate electrode layers, channel structures, and bit lines, while the peripheral circuit region includes page buffers.
- The cell region of the semiconductor device has gate electrode layers stacked on a substrate.
- The channel structures extend through the gate electrode layers and are connected to the substrate.
- The bit lines are connected to the channel structures above the gate electrode layers.
- The peripheral circuit region includes page buffers that are connected to the bit lines.
- Each page buffer consists of two elements adjacent to each other in a certain direction.
- The two elements share a common active region between their gate structures.
- The boundaries of the common active region have an oblique shape, forming an angle between 0 and 90 degrees with the certain direction.
Potential applications of this technology:
- This semiconductor device can be used in various electronic devices such as smartphones, tablets, and computers.
- It can be utilized in memory chips, processors, and other integrated circuits.
Problems solved by this technology:
- The oblique boundaries of the common active region allow for more efficient use of space in the semiconductor device.
- This design helps to reduce the size of the device while maintaining its functionality.
Benefits of this technology:
- The compact size of the semiconductor device allows for more components to be integrated into a smaller area.
- The improved space utilization leads to increased performance and efficiency of the device.
- The design also helps to reduce manufacturing costs by optimizing the use of materials.
Original Abstract Submitted
A semiconductor device includes a cell region and a peripheral circuit region. The cell region includes gate electrode layers stacked on a substrate, channel structures extending in a first direction, extending through the gate electrode layers, and connected to the substrate, and bit lines extending in a second direction and connected to the channel structures above the gate electrode layers. The peripheral circuit region includes page buffers connected to the bit lines. Each page buffer includes a first and second elements adjacent to each other in the second direction and sharing a common active region between a first gate structure of the first element and a second gate structure of the second element in the second direction. Boundaries of the common active region include an oblique boundary extending in an oblique direction forming an angle between 0 and 90 degrees with the second direction.
