17707015. INTEGRATED CIRCUIT SEMICONDUCTOR ELEMENT HAVING HETEROGENEOUS GATE STRUCTURES AND METHOD OF FABRICATING INTEGRATED CIRCUIT SEMICONDUCTOR ELEMENT simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
INTEGRATED CIRCUIT SEMICONDUCTOR ELEMENT HAVING HETEROGENEOUS GATE STRUCTURES AND METHOD OF FABRICATING INTEGRATED CIRCUIT SEMICONDUCTOR ELEMENT
Organization Name
Inventor(s)
KYUNGSOO Kim of HWASEONG-SI (KR)
INTEGRATED CIRCUIT SEMICONDUCTOR ELEMENT HAVING HETEROGENEOUS GATE STRUCTURES AND METHOD OF FABRICATING INTEGRATED CIRCUIT SEMICONDUCTOR ELEMENT - A simplified explanation of the abstract
This abstract first appeared for US patent application 17707015 titled 'INTEGRATED CIRCUIT SEMICONDUCTOR ELEMENT HAVING HETEROGENEOUS GATE STRUCTURES AND METHOD OF FABRICATING INTEGRATED CIRCUIT SEMICONDUCTOR ELEMENT
Simplified Explanation
The abstract describes an integrated circuit semiconductor element that includes a quadruple-gate structure with nano sheet stacked structures, as well as a planar FET or a zebra fin FET with a triple-gate structure.
- The integrated circuit semiconductor element includes a substrate.
- It features a complementary field effect transistor (cFET) with a quadruple-gate structure.
- The quadruple-gate structure consists of nano sheet stacked structures that are sequentially stacked.
- Additionally, the element includes a planar FET with a mono-gate structure or a zebra fin FET (ZE FINFET) with a triple-gate structure.
- These structures are formed over the substrate.
Potential applications of this technology:
- Integrated circuits for various electronic devices such as smartphones, tablets, and computers.
- High-performance computing systems.
- Internet of Things (IoT) devices.
- Automotive electronics.
- Medical devices.
Problems solved by this technology:
- Improved performance and efficiency of integrated circuits.
- Enhanced control over the flow of electric current.
- Reduction in power consumption.
- Increased speed and processing capabilities.
Benefits of this technology:
- Higher performance and efficiency in electronic devices.
- Improved battery life in portable devices.
- Enhanced computational power.
- Greater control and precision in electronic circuits.
- Potential for smaller and more compact devices.
Original Abstract Submitted
An integrated circuit semiconductor element includes: a substrate; a complementary field effect transistor (FET) (cFET) formed over the substrate and having a quadruple-gate structure, in which nano sheet stacked structures are sequentially stacked; and a planar FET having a mono-gate structure or a zebra fin FET (ZE FINFET) having a triple-gate structure, which are formed over the substrate.
