View source for 17704701. SEMICONDUCTOR DEVICE AND ELECTRONIC SYSTEM INCLUDING SAME simplified abstract (Samsung Electronics Co., Ltd.)

=SEMICONDUCTOR DEVICE AND ELECTRONIC SYSTEM INCLUDING SAME=


==Organization Name==

[[:Category:Samsung Electronics Co., Ltd.|Samsung Electronics Co., Ltd.]]


[[Category:Samsung Electronics Co., Ltd.]]

==Inventor(s)==

[[:Category:Chung-Ho Yu of Hwaseong-Si (KR)|Chung-Ho Yu of Hwaseong-Si (KR)]][[Category:Chung-Ho Yu of Hwaseong-Si (KR)]]

[[:Category:Hongsoo Jeon of Suwon-Si (KR)|Hongsoo Jeon of Suwon-Si (KR)]][[Category:Hongsoo Jeon of Suwon-Si (KR)]]

==SEMICONDUCTOR DEVICE AND ELECTRONIC SYSTEM INCLUDING SAME - A simplified explanation of the abstract==


This abstract first appeared for US patent application 17704701 titled 'SEMICONDUCTOR DEVICE AND ELECTRONIC SYSTEM INCLUDING SAME

==Simplified Explanation==

The patent application describes a semiconductor device that includes multiple transistors and an electrode structure with vertically stacked electrodes. The device also includes penetration electrodes and interconnection lines.

* The semiconductor device includes multiple transistors, each with its own gate electrode.
* The electrode structure consists of vertically stacked electrodes on the transistors.
* The electrode structure also includes first and second pads adjacent to each other in one direction.
* First and second landing pads are connected respectively to the first and second pads.
* The first and second landing pads are connected to the substrate.
* A first penetration electrode connects the first landing pad and the first pad.
* A second penetration electrode connects the second landing pad and the second pad.
* Lower interconnection lines are present between the first and second landing pads, extending in a direction perpendicular to the first direction.

==Potential Applications==
* This semiconductor device can be used in various electronic devices, such as smartphones, computers, and IoT devices.
* It can be utilized in the manufacturing of integrated circuits and microprocessors.

==Problems Solved==
* The device allows for efficient connection between the transistors and the electrode structure.
* The penetration electrodes enable reliable electrical connections between the landing pads and the pads.
* The lower interconnection lines facilitate communication between the landing pads.

==Benefits==
* The vertically stacked electrodes and penetration electrodes provide a compact and space-efficient design.
* The device allows for improved performance and functionality of electronic devices.
* The interconnection lines enable efficient data transfer and signal transmission.


==Original Abstract Submitted==

A semiconductor device includes; a first transistor on a substrate and including a first gate electrode, a second transistor on the substrate and including a second gate electrode adjacent to the first gate electrode, an electrode structure including electrodes vertically stacked on the first and second transistors and including first and second pads adjacent to in the first direction, first and second landing pads between the substrate and the electrode structure connected respectively to the first and second landing pads, a first penetration electrode penetrating the electrode structure to connect the first landing pad and the first pad, a second penetration electrode penetrating the electrode structure to connect the second landing pad and the second pad, and lower interconnection lines between the first landing pad and the second landing pad and extending in a second direction substantially perpendicular to the first direction.



[[Category:H01L23/535]]
[[Category:H01L27/11556]]
[[Category:H01L27/11529]]
[[Category:H01L27/11582]]
[[Category:H01L27/11573]]