View source for 17690154. SEMICONDUCTOR DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO.,LTD.)

=SEMICONDUCTOR DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME=


==Organization Name==

[[:Category:SAMSUNG ELECTRONICS CO.,LTD.|SAMSUNG ELECTRONICS CO.,LTD.]]


[[Category:SAMSUNG ELECTRONICS CO.,LTD.]]

==Inventor(s)==

[[:Category:Euntaek Jung of Hwaseong-si (KR)|Euntaek Jung of Hwaseong-si (KR)]][[Category:Euntaek Jung of Hwaseong-si (KR)]]

[[:Category:Jaeho Kim of Hwaseong-si (KR)|Jaeho Kim of Hwaseong-si (KR)]][[Category:Jaeho Kim of Hwaseong-si (KR)]]

[[:Category:Joonsung Kim of Seoul (KR)|Joonsung Kim of Seoul (KR)]][[Category:Joonsung Kim of Seoul (KR)]]

[[:Category:Jiwon Kim of Hwaseong-si (KR)|Jiwon Kim of Hwaseong-si (KR)]][[Category:Jiwon Kim of Hwaseong-si (KR)]]

[[:Category:Sukkang Sung of Seongnam-si (KR)|Sukkang Sung of Seongnam-si (KR)]][[Category:Sukkang Sung of Seongnam-si (KR)]]

[[:Category:Sangdon Lee of Hwaseong-si (KR)|Sangdon Lee of Hwaseong-si (KR)]][[Category:Sangdon Lee of Hwaseong-si (KR)]]

[[:Category:Jong-Min Lee of Yongin-si (KR)|Jong-Min Lee of Yongin-si (KR)]][[Category:Jong-Min Lee of Yongin-si (KR)]]

==SEMICONDUCTOR DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME - A simplified explanation of the abstract==


This abstract first appeared for US patent application 17690154 titled 'SEMICONDUCTOR DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME

==Simplified Explanation==

The patent application describes a semiconductor device that includes an electrode structure, a vertical structure, a first insulating layer, a conductive pattern, an upper horizontal electrode, and an upper semiconductor pattern.

* The electrode structure consists of stacked electrodes on a substrate with an insulating pattern on the topmost electrode.
* The vertical structure penetrates the electrode structure and is connected to the substrate.
* A first insulating layer covers the electrode structure and the vertical structure.
* A conductive pattern passes through the first insulating layer and connects to the vertical structure.
* An upper horizontal electrode is placed on the conductive pattern.
* An upper semiconductor pattern passes through the upper horizontal electrode and connects to the conductive pattern.
* The conductive pattern has a side surface on the vertical structure and another side surface on the insulating pattern.

Potential Applications:

* This semiconductor device can be used in various electronic devices such as smartphones, tablets, computers, and televisions.
* It can be utilized in power electronics, integrated circuits, and microprocessors.

Problems Solved:

* The device provides a compact and efficient structure for semiconductor devices.
* It allows for improved connectivity and integration of different components.

Benefits:

* The electrode structure and vertical structure enable efficient electrical connections.
* The use of insulating patterns and layers ensures proper insulation and protection.
* The compact design allows for smaller and more portable electronic devices.
* The improved connectivity and integration enhance the performance and functionality of the semiconductor device.


==Original Abstract Submitted==

A semiconductor device includes an electrode structure including electrodes stacked on a substrate and an insulating pattern on an uppermost electrode of the electrodes, a vertical structure that penetrates the electrode structure and is connected to the substrate, a first insulating layer on the electrode and the vertical structure, a conductive pattern that penetrates the first insulating layer and is connected to the vertical structure, an upper horizontal electrode on the conductive pattern, and an upper semiconductor pattern that penetrates the upper horizontal electrode and is connected to the conductive pattern. The conductive pattern has a first side surface on the vertical structure and a second side surface on the insulating pattern.



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[[Category:H01L27/11519]]
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[[Category:H01L27/11565]]
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