17686184. Patterned Semiconductor Device and Method simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)

Patterned Semiconductor Device and Method

Organization Name

Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor(s)

Jung-Hau Shiu of New Taipei City (TW)

Ching-Yu Chang of Taipei City (TW)

Wei-Ren Wang of New Taipei City (TW)

JeiMing Chen of Tainan City (TW)

Patterned Semiconductor Device and Method - A simplified explanation of the abstract

This abstract first appeared for US patent application 17686184 titled 'Patterned Semiconductor Device and Method

Simplified Explanation

The patent application describes a method for patterning semiconductor devices and the resulting semiconductor devices. Here are the key points:

• The method starts by forming a dielectric layer over a semiconductor substrate.
• A hard mask layer is then formed over the dielectric layer.
• The hard mask layer is etched to create an opening that exposes the top surface of the dielectric layer.
• A plasma treatment process is performed on the top surfaces of the dielectric layer and the hard mask layer.
• After the plasma treatment, a spacer is selectively deposited on the side surface of the hard mask layer, as well as on the top surfaces of the dielectric layer and the hard mask layer.
• The dielectric layer is then etched using the spacer as a mask.

Potential applications of this technology:

• This method can be used in the fabrication of various semiconductor devices, such as transistors, integrated circuits, and memory devices.
• It can improve the precision and accuracy of patterning in semiconductor manufacturing processes.

Problems solved by this technology:

• The method provides a more precise and controlled way of patterning semiconductor devices, reducing the risk of errors or defects.
• It allows for the creation of smaller and more complex semiconductor structures, enabling the development of advanced electronic devices.

Benefits of this technology:

• The method improves the overall performance and functionality of semiconductor devices by enabling more precise patterning.
• It increases the efficiency of semiconductor manufacturing processes, leading to higher yields and lower production costs.
• The resulting semiconductor devices have improved reliability and durability.

Original Abstract Submitted

Methods of patterning semiconductor devices and semiconductor devices formed by the same are disclosed. In an embodiment, a method includes forming a first dielectric layer over a semiconductor substrate; forming a first hard mask layer over the first dielectric layer; etching the first hard mask layer to form a first opening exposing a top surface of the first dielectric layer; performing a plasma treatment process on the top surface of the first dielectric layer and a top surface of the first hard mask layer; after performing the plasma treatment process, selectively depositing a spacer on a side surface of the first hard mask layer, the top surface of the first dielectric layer and the top surface of the first hard mask layer being free from the spacer after selectively depositing the spacer; and etching the first dielectric layer using the spacer as a mask.