View source for 17671021. OPTICAL PROXIMITY CORRECTION METHOD USING CHIEF RAY ANGLE AND PHOTOLITHOGRAPHY METHOD INCLUDING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)

=OPTICAL PROXIMITY CORRECTION METHOD USING CHIEF RAY ANGLE AND PHOTOLITHOGRAPHY METHOD INCLUDING THE SAME=


==Organization Name==

[[:Category:Samsung Electronics Co., Ltd.|Samsung Electronics Co., Ltd.]]


[[Category:Samsung Electronics Co., Ltd.]]

==Inventor(s)==

[[:Category:Jeong-Lim Kim of Seoul (KR)|Jeong-Lim Kim of Seoul (KR)]][[Category:Jeong-Lim Kim of Seoul (KR)]]

[[:Category:Jae Myoung Lee of Hwaseong-si (KR)|Jae Myoung Lee of Hwaseong-si (KR)]][[Category:Jae Myoung Lee of Hwaseong-si (KR)]]

[[:Category:Sung Gon Jung of Seongnam-si (KR)|Sung Gon Jung of Seongnam-si (KR)]][[Category:Sung Gon Jung of Seongnam-si (KR)]]

==OPTICAL PROXIMITY CORRECTION METHOD USING CHIEF RAY ANGLE AND PHOTOLITHOGRAPHY METHOD INCLUDING THE SAME - A simplified explanation of the abstract==


This abstract first appeared for US patent application 17671021 titled 'OPTICAL PROXIMITY CORRECTION METHOD USING CHIEF RAY ANGLE AND PHOTOLITHOGRAPHY METHOD INCLUDING THE SAME

==Simplified Explanation==

The patent application describes an optical proximity correction method for designing a mask design. The method involves setting a reference point and calculating chief ray angles for various points on the mask design. The point with the maximum chief ray angle is identified as the first point of interest and its distance from the reference point is considered as a deteriorated distance. The method then compensates for image distortion caused by the pattern located at the deteriorated distance.

* The method involves designing a mask design and setting a reference point.
* Chief ray angles are calculated for multiple points on the mask design.
* The point with the maximum chief ray angle is identified as the first point of interest.
* The distance of the first point of interest from the reference point is considered as a deteriorated distance.
* Image distortion caused by the pattern at the deteriorated distance is compensated for.

== Potential Applications ==
* Semiconductor manufacturing
* Lithography processes
* Optical proximity correction in microelectronics

== Problems Solved ==
* Image distortion in mask designs
* Compensating for pattern deterioration
* Improving accuracy in optical proximity correction

== Benefits ==
* Enhanced image transfer quality
* Improved precision in mask design
* Higher accuracy in lithography processes


==Original Abstract Submitted==

An optical proximity correction method includes designing a mask design. The designing of the mask design includes setting a reference point of the mask design, calculating a plurality of chief ray angles of a plurality of points of interest on the mask design, respectively, each of the plurality of points of interest having a corresponding distance from the reference point, finding, among the plurality of points of interest, a first point of interest having a maximum chief ray angle among the plurality of chief ray angles, a distance of the first point of interest from the reference point being set as a deteriorated distance, and compensating for distortion of an image to be transferred from a pattern located at the deteriorated distance from the reference point of the mask design.



[[Category:G03F1/36]]