17663278. SEMICONDUCTOR DEVICE AND METHOD simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
Contents
SEMICONDUCTOR DEVICE AND METHOD
Organization Name
Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor(s)
Po-Chin Chang of Taichung (TW)
SEMICONDUCTOR DEVICE AND METHOD - A simplified explanation of the abstract
This abstract first appeared for US patent application 17663278 titled 'SEMICONDUCTOR DEVICE AND METHOD
Simplified Explanation
The patent application describes a method for fabricating a semiconductor device with merged epitaxial regions. Here are the key points:
- The method begins by forming two fins protruding from a substrate.
- An isolation layer is then formed around the fins to separate them from the surrounding materials.
- Next, a first epitaxial region is grown on the first fin and a second epitaxial region is grown on the second fin. These epitaxial regions eventually merge together.
- An etching process is performed to separate the first and second epitaxial regions.
- A dielectric material is deposited between the separated epitaxial regions.
- Finally, a gate stack is formed over the first fin.
Potential applications of this technology:
- Semiconductor devices manufacturing
- Integrated circuits production
- Microelectronics industry
Problems solved by this technology:
- Enables the formation of merged epitaxial regions, which can enhance the performance and functionality of semiconductor devices.
- Provides a simplified and efficient method for fabricating semiconductor devices with merged epitaxial regions.
Benefits of this technology:
- Improved performance and functionality of semiconductor devices.
- Simplified fabrication process.
- Enhanced integration capabilities.
Original Abstract Submitted
A method includes forming a first fin and a second fin protruding from a substrate; forming an isolation layer surrounding the first fin and the second fin; epitaxially growing a first epitaxial region on the first fin and a second epitaxial region on the second fin, wherein the first epitaxial region and the second epitaxial region are merged together; performing an etching process on the first epitaxial region and the second epitaxial region, wherein the etching process separates the first epitaxial region from the second epitaxial region; depositing a dielectric material between the first epitaxial region and the second epitaxial region; and forming a first gate stack extending over the first fin.
