17644449. MAGNETO-RESISTIVE RANDOM ACCESS MEMORY WITH SEGMENTED BOTTOM ELECTRODE simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)

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MAGNETO-RESISTIVE RANDOM ACCESS MEMORY WITH SEGMENTED BOTTOM ELECTRODE

Organization Name

INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor(s)

Oscar Van Der Straten of Guilderland Center NY (US)

Willie Lester Muchrison, Jr. of Troy NY (US)

Lisamarie White of Staatsburg NY (US)

Chih-Chao Yang of Glenmont NY (US)

MAGNETO-RESISTIVE RANDOM ACCESS MEMORY WITH SEGMENTED BOTTOM ELECTRODE - A simplified explanation of the abstract

This abstract first appeared for US patent application 17644449 titled 'MAGNETO-RESISTIVE RANDOM ACCESS MEMORY WITH SEGMENTED BOTTOM ELECTRODE

Simplified Explanation

The abstract describes a patent application for a magneto-resistive random access memory (MRAM) with a segmented bottom electrode. The MRAM includes a magnetic tunnel junction pillar above a bottom electrode layer, which is divided into two portions. The first portion of the bottom electrode layer contains a metal region, while the second portion contains a metal-oxide region. A sidewall spacer is placed along the sidewalls of the magnetic tunnel junction pillar, covering the second portion of the bottom electrode layer.

  • The patent application is for a segmented bottom electrode in a magneto-resistive random access memory (MRAM).
  • The bottom electrode layer is divided into two portions: a metal region and a metal-oxide region.
  • A magnetic tunnel junction pillar is positioned above the bottom electrode layer.
  • A sidewall spacer is placed along the sidewalls of the magnetic tunnel junction pillar, covering the metal-oxide region of the bottom electrode layer.

Potential applications of this technology:

  • MRAM devices in various electronic devices, such as computers, smartphones, and IoT devices.
  • Non-volatile memory applications where high-speed, low-power, and high-density memory is required.

Problems solved by this technology:

  • Improves the performance and reliability of MRAM devices.
  • Reduces power consumption and increases data retention in MRAM devices.
  • Enables high-density memory integration in small form factor devices.

Benefits of this technology:

  • Faster read and write speeds compared to traditional memory technologies.
  • Non-volatile memory, meaning data is retained even when power is lost.
  • Lower power consumption, leading to longer battery life in portable devices.
  • High-density memory integration, allowing for more data storage in smaller devices.


Original Abstract Submitted

A magneto-resistive random access memory with segmented bottom electrode includes a magnetic tunnel junction pillar above a first portion of a bottom electrode layer, the first portion of the bottom electrode layer includes a metal region. A sidewall spacer is disposed along sidewalls of the magnetic tunnel junction pillar and above a second portion of the bottom electrode layer including a metal-oxide region. The first portion of the bottom electrode layer composed of the metal region and the second portion of the bottom electrode layer composed of the metal-oxide region form the segmented bottom electrode.

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