17644448. Method to Produce Buried Nb Lines Surrounded by Ti simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)

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Method to Produce Buried Nb Lines Surrounded by Ti

Organization Name

INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor(s)

Santino Carnevale of Yorktown Heights NY (US)

Wei Kong of Yorktown Heights NY (US)

Mary Beth Rothwell of Yorktown Heights NY (US)

Bryan Trimm of Yorktown Heights NY (US)

Brent Wascaser of Yorktown Heights NY (US)

Method to Produce Buried Nb Lines Surrounded by Ti - A simplified explanation of the abstract

This abstract first appeared for US patent application 17644448 titled 'Method to Produce Buried Nb Lines Surrounded by Ti

Simplified Explanation

The abstract describes a method for forming layers of titanium (Ti) and niobium (Nb) on a substrate by creating a trench in the substrate and depositing the layers within the trench. The layers are then planarized to the top surface of the substrate.

  • The method involves the following steps:
   * Creating a trench in a substrate.
   * Depositing a first layer of Ti on the exposed surface of the trench.
   * Depositing a layer of Nb on top of the first Ti layer.
   * Depositing a second layer of Ti on top of the Nb layer.
   * Planarizing the layers to the top surface of the substrate, while keeping them within the trench.
   * The planarizing process exposes at least two surfaces of the Nb layer.

Potential applications of this technology:

  • Semiconductor manufacturing: This method can be used in the fabrication of semiconductor devices, where the layers of Ti and Nb may be used for various purposes such as electrical contacts or interconnects.
  • Superconducting devices: The deposition of Nb layer can be useful in the production of superconducting devices, where Nb is a commonly used material due to its superconducting properties.

Problems solved by this technology:

  • Precise layer deposition: The method allows for the controlled deposition of multiple layers within a trench, ensuring that the layers remain confined to the desired area.
  • Exposing multiple surfaces: The planarizing process exposes multiple surfaces of the Nb layer, which can be advantageous for certain applications where access to multiple sides of the layer is required.

Benefits of this technology:

  • Simplified process: The method provides a simplified approach to depositing multiple layers within a trench, reducing the complexity and time required for fabrication.
  • Enhanced functionality: By exposing multiple surfaces of the Nb layer, the method offers increased versatility and potential for improved device performance in applications that require access to multiple sides of the layer.


Original Abstract Submitted

A method comprising forming a trench in a substrate and forming a first Ti layer on the top surface of the substrate, such that, the first Ti layer is formed on the exposed surface of the trench. Forming a Nb layer on an exposed top surface of first Ti layer and forming a second Ti layer on the exposed top surface of the Nb layer. Planarizing the second Ti layer, the Nb layer, and the first Ti layer to the top surface of the substrate, wherein the second Ti layer, the Nb layer, and the first Ti layer remain within the trench, wherein the Nb layer has at least two surfaces exposed during the planarizing process.

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