17644447. Qubit Capacitor Trimming for Frequency Tuning simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
Contents
Qubit Capacitor Trimming for Frequency Tuning
Organization Name
INTERNATIONAL BUSINESS MACHINES CORPORATION
Inventor(s)
Antoin Hervier of Yorktown Heights NY (US)
Oliver Dial of Yorktown Heights NY (US)
Ken Perez of Yorktown Heights NY (US)
Mary Beth Rothwell of Yorktown Heights NY (US)
Qubit Capacitor Trimming for Frequency Tuning - A simplified explanation of the abstract
This abstract first appeared for US patent application 17644447 titled 'Qubit Capacitor Trimming for Frequency Tuning
Simplified Explanation
The abstract describes a method for forming capacitor pads for a qubit on a silicon wafer. The method involves applying a resist layer on top of the capacitor pads, patterning the resist layer to expose a portion of the capacitor pads, and using an electron beam to remove the exposed portion of the capacitor.
- The method involves forming capacitor pads for a qubit on a silicon wafer.
- A resist layer is applied on top of the capacitor pads.
- The resist layer is patterned to expose a portion of the capacitor pads.
- An electron beam is used to remove the exposed portion of the capacitor.
Potential Applications
- Quantum computing
- Semiconductor industry
- Electronics manufacturing
Problems Solved
- Efficient formation of capacitor pads for qubits
- Precise patterning of resist layer
- Accurate removal of exposed portion of the capacitor
Benefits
- Improved performance of qubits
- Enhanced reliability of quantum computing systems
- Higher efficiency in semiconductor manufacturing
Original Abstract Submitted
A method comprising forming capacitor pads for a qubit on a silicon wafer. Applying a resist layer on top of the capacitor pads. Pattern the resist layer to expose a portion of the capacitor pads. Utilizing an electron beam to remove the exposed portion of the capacitor.
