View source for 17590863. METHODS OF FORMING FIN-ON-NANOSHEET TRANSISTOR STACKS simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)

=METHODS OF FORMING FIN-ON-NANOSHEET TRANSISTOR STACKS=


==Organization Name==

[[:Category:SAMSUNG ELECTRONICS CO., LTD.|SAMSUNG ELECTRONICS CO., LTD.]]


[[Category:SAMSUNG ELECTRONICS CO., LTD.]]

==Inventor(s)==

[[:Category:Gunho Jo of Schenectady NY (US)|Gunho Jo of Schenectady NY (US)]][[Category:Gunho Jo of Schenectady NY (US)]]

[[:Category:Ki-il Kim of Clifton Park NY (US)|Ki-il Kim of Clifton Park NY (US)]][[Category:Ki-il Kim of Clifton Park NY (US)]]

[[:Category:Byounghak Hong of Albany NY (US)|Byounghak Hong of Albany NY (US)]][[Category:Byounghak Hong of Albany NY (US)]]

==METHODS OF FORMING FIN-ON-NANOSHEET TRANSISTOR STACKS - A simplified explanation of the abstract==


This abstract first appeared for US patent application 17590863 titled 'METHODS OF FORMING FIN-ON-NANOSHEET TRANSISTOR STACKS

==Simplified Explanation==

The abstract describes a method for forming multiple transistor stacks using nanosheets and semiconductor fins. 

* Etching of nanosheets is performed using spacers on the sidewalls of semiconductor fins as an etch mask.
* This process creates spaced-apart nanosheet stacks with semiconductor fins on each stack.

==Potential Applications==
This technology can be applied in various fields, including:

* Semiconductor manufacturing
* Electronics industry
* Integrated circuit fabrication

==Problems Solved==
The method addresses the following problems:

* Efficient formation of multiple transistor stacks
* Precise etching of nanosheets
* Ensuring proper alignment and spacing of nanosheet stacks

==Benefits==
The benefits of this technology include:

* Improved transistor stack formation process
* Enhanced control over nanosheet etching
* Increased efficiency and accuracy in semiconductor manufacturing


==Original Abstract Submitted==

Methods of forming a plurality of transistor stacks are provided. A method of forming a plurality of transistor stacks includes etching a plurality of nanosheets, using a plurality of spacers that are on sidewalls of a plurality of semiconductor fins as an etch mask, to provide a plurality of spaced-apart nanosheet stacks that each have at least one of the semiconductor fins thereon.



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