17548828. MEMORY ELEMENT WITH A HARDMASK STACK HAVING DIFFERENT STRESS LEVELS simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)

MEMORY ELEMENT WITH A HARDMASK STACK HAVING DIFFERENT STRESS LEVELS

Organization Name

INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor(s)

Oscar Van Der Straten of Guilderland Center NY (US)

Lisamarie White of Staatsburg NY (US)

Willie Lester Muchrison, Jr. of Troy NY (US)

Scott A. Devries of Albany NY (US)

Daniel Charles Edelstein of White Plains NY (US)

Michael Rizzolo of Delmar NY (US)

Chih-Chao Yang of Glenmont NY (US)

MEMORY ELEMENT WITH A HARDMASK STACK HAVING DIFFERENT STRESS LEVELS - A simplified explanation of the abstract

This abstract first appeared for US patent application 17548828 titled 'MEMORY ELEMENT WITH A HARDMASK STACK HAVING DIFFERENT STRESS LEVELS

Simplified Explanation

The abstract describes an integrated circuit structure that includes a memory element and a non-sacrificial hardmask stack. The hardmask stack consists of a first hardmask region and a second hardmask region, with the first region having a higher compressive stress level than the second region.

• The invention is an integrated circuit structure with a memory element and a non-sacrificial hardmask stack.
• The hardmask stack includes two regions: a first region and a second region.
• The compressive stress level of the first hardmask region is greater than that of the second hardmask region.

Potential applications of this technology:

• This technology can be used in the manufacturing of integrated circuits.
• It can be applied in the production of memory elements within integrated circuits.

Problems solved by this technology:

• The non-sacrificial hardmask stack provides protection to the memory element during the manufacturing process.
• The different compressive stress levels in the hardmask regions help optimize the performance and reliability of the integrated circuit structure.

Benefits of this technology:

• The non-sacrificial hardmask stack enhances the durability and longevity of the memory element.
• The optimized compressive stress levels in the hardmask regions improve the overall performance and reliability of the integrated circuit structure.

Original Abstract Submitted

Embodiments of the invention are directed to an integrated circuit (IC) structure that includes a memory element a non-sacrificial hardmask stack over the memory element. The non-sacrificial hardmask stack includes a first hardmask region and a second hardmask region. A compressive stress level of the first hardmask region is greater than a compressive stress level of the second hardmask region.