17544328. WRAPAROUND CONTACT WITH REDUCED DISTANCE TO CHANNEL simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)

WRAPAROUND CONTACT WITH REDUCED DISTANCE TO CHANNEL

Organization Name

INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor(s)

Ruilong Xie of Niskayuna NY (US)

Reinaldo Vega of Mahopac NY (US)

Yao Yao of Albany NY (US)

Andrew M. Greene of Slingerlands NY (US)

Veeraraghavan S. Basker of Schenectady NY (US)

Pietro Montanini of Albany NY (US)

Jingyun Zhang of Albany NY (US)

Robert Robison of Rexford NY (US)

WRAPAROUND CONTACT WITH REDUCED DISTANCE TO CHANNEL - A simplified explanation of the abstract

This abstract first appeared for US patent application 17544328 titled 'WRAPAROUND CONTACT WITH REDUCED DISTANCE TO CHANNEL

Simplified Explanation

The abstract describes a nanosheet semiconductor device that includes channel nanosheets connected to a source/drain region. The device also includes a source/drain region contact that is in physical contact with the internal recess of the source/drain region, as well as the front and rear surfaces.

• The device is made up of nanosheets that serve as channels and are connected to a source/drain region.
• The source/drain region has a front surface, a rear surface, and an internal recess between them.
• A source/drain region contact is in physical contact with the internal recess, front surface, and rear surface.
• The device can be fabricated by forming the source/drain region, creating a recess in it, and then forming a sacrificial source/drain region around the recessed region.
• The sacrificial source/drain region can be removed, and the source/drain region contact can be formed in its place.

Potential applications of this technology:

• Nanosheet semiconductor devices can be used in various electronic devices, such as smartphones, tablets, and computers.
• The technology can be applied in the development of more efficient and compact integrated circuits.
• It can contribute to advancements in nanoelectronics and enable the creation of smaller and faster electronic devices.

Problems solved by this technology:

• The nanosheet semiconductor device addresses the need for improved performance and miniaturization in electronic devices.
• It provides a solution for connecting the source/drain region to the nanosheets in a compact and efficient manner.
• The fabrication process described in the patent application solves the challenge of forming the source/drain region contact in the internal recess of the source/drain region.

Benefits of this technology:

• The nanosheet semiconductor device offers improved performance and power efficiency compared to traditional semiconductor devices.
• It allows for the creation of smaller and more compact electronic devices.
• The fabrication process described in the patent application provides a reliable and efficient method for manufacturing these devices.

Original Abstract Submitted

A nanosheet semiconductor device includes channel nanosheets each connected to a source/drain region that has a front surface, a rear surface, and an internal recess between the front surface and the rear surface. The device further includes a source/drain region contact in physical contact with the V shaped internal recess, with the front surface, and with the rear surface. The device may be fabricated by forming the source/drain region, recessing the source/drain region, and by forming a sacrificial source/drain region upon and around the recessed source/drain region. The sacrificial source/drain region may be removed and the source/drain region contact may be formed in place thereof.