17542377. GATE ALL AROUND SEMICONDUCTOR DEVICE WITH STRAINED CHANNELS simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)

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GATE ALL AROUND SEMICONDUCTOR DEVICE WITH STRAINED CHANNELS

Organization Name

INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor(s)

SHOGO Mochizuki of Mechanicville NY (US)

Nicolas Loubet of GUILDERLAND NY (US)

GATE ALL AROUND SEMICONDUCTOR DEVICE WITH STRAINED CHANNELS - A simplified explanation of the abstract

This abstract first appeared for US patent application 17542377 titled 'GATE ALL AROUND SEMICONDUCTOR DEVICE WITH STRAINED CHANNELS

Simplified Explanation

The abstract describes a semiconductor device called GAA (gate-all-around) that consists of two source/drain regions on opposite sides of a gate structure. Each source/drain region includes a buffer layer and a source/drain layer, both grown epitaxially. The gate structure contains nanosheet channels made of semiconductor material.

  • The GAA semiconductor device has a unique structure with two source/drain regions and a gate structure with nanosheet channels.
  • The source/drain regions are made up of epitaxially grown buffer layers and source/drain layers.
  • The nanosheet channels in the gate structure provide enhanced performance and functionality.

Potential Applications

  • This GAA semiconductor device can be used in various electronic devices, such as smartphones, tablets, and computers.
  • It can also be applied in high-performance computing systems, data centers, and artificial intelligence applications.

Problems Solved

  • The GAA semiconductor device addresses the need for improved performance and functionality in electronic devices.
  • It solves the challenge of achieving higher speeds and lower power consumption in semiconductor devices.

Benefits

  • The GAA semiconductor device offers enhanced performance due to the unique structure and nanosheet channels.
  • It provides improved power efficiency, allowing for longer battery life in portable devices.
  • The device's epitaxially grown layers contribute to better device reliability and stability.


Original Abstract Submitted

A GAA (gate-all-around) semiconductor device includes a first source/drain region comprising an epitaxially grown first buffer layer disposed in contact with first device channel inner spacers and a device substrate, and an epitaxially grown first source/drain disposed adjacent to the first buffer layer. The device also includes a second source/drain region comprising an epitaxially grown second buffer layer disposed in contact with second device channel inner spacers and the device substrate, and an epitaxially grown second source/drain disposed adjacent to the second buffer layer. The first source/drain region and the second source/drain region are disposed on opposing sides of a device gate structure. The device gate structure comprising semiconductor nanosheet channels disposed between the first source/drain region and the second source/drain region.

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