17524851. SHORT GATE ON ACTIVE AND LONGER GATE ON STI FOR NANOSHEETS simplified abstract (International Business Machines Corporation)
Contents
SHORT GATE ON ACTIVE AND LONGER GATE ON STI FOR NANOSHEETS
Organization Name
International Business Machines Corporation
Inventor(s)
Chen Zhang of Guilderland NY (US)
Kangguo Cheng of Schenectady NY (US)
Ruilong Xie of Niskayuna NY (US)
SHORT GATE ON ACTIVE AND LONGER GATE ON STI FOR NANOSHEETS - A simplified explanation of the abstract
This abstract first appeared for US patent application 17524851 titled 'SHORT GATE ON ACTIVE AND LONGER GATE ON STI FOR NANOSHEETS
Simplified Explanation
The patent application describes a method for forming a nanosheet device. Here are the key points:
- Nanosheet stacks are formed over a substrate, with shallow trench isolation (STI) regions separating the stacks.
- A first hardmask material is formed over the nanosheet stacks.
- A sacrificial gate is deposited and recessed, creating recesses adjacent to the first hardmask material. The top surface of the sacrificial gate is below the top surface of the first hardmask material.
- A second hardmask material is formed in the recesses, ensuring a uniform gate length in both the first and second hardmask materials.
- The first hardmask material is selectively trimmed, resulting in a shorter gate length over the nanosheet stacks compared to the STI regions.
Potential applications of this technology:
- Nanosheet devices can be used in various electronic applications, such as integrated circuits and transistors.
- The method allows for precise control of gate length, which can improve the performance and efficiency of nanosheet devices.
Problems solved by this technology:
- The method provides a way to form nanosheet devices with uniform gate length, which is crucial for their proper functioning.
- By selectively trimming the first hardmask material, the method ensures that the gate length over the nanosheet stacks is shorter than over the STI regions, which helps prevent leakage and improve device performance.
Benefits of this technology:
- The method allows for the formation of nanosheet devices with precise gate length control, leading to improved device performance and efficiency.
- By using a sacrificial gate and recessing it, the method enables the formation of recesses for the second hardmask material, ensuring a uniform gate length across the device.
- Selectively trimming the first hardmask material further enhances the performance of the nanosheet device by reducing leakage and improving overall device functionality.
Original Abstract Submitted
A method is presented for forming a nanosheet device. The method includes forming nanosheets stacks over a substrate, the nanosheet stacks separated by shallow trench isolation (STI) regions, forming a first hardmask material over the nanosheet stacks, depositing a sacrificial gate, recessing the sacrificial gate such that recesses are defined adjacent the first hardmask material, wherein a top surface of the sacrificial gate is below a top surface of the first hardmask material, forming a second hardmask material in the recesses, defining a uniform gate length in both the first and second hardmask materials, and selectively trimming the first hardmask material such that a gate length over the nanosheet stacks is less than a gate length over the STI regions.
