View source for 17480329. ELECTROSTATIC DISCHARGE PROTECTION CELL AND ANTENNA INTEGRATED WITH THROUGH SILICON VIA simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)

=ELECTROSTATIC DISCHARGE PROTECTION CELL AND ANTENNA INTEGRATED WITH THROUGH SILICON VIA=


==Organization Name==

[[:Category:TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.|TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.]]


[[Category:TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.]]

==Inventor(s)==

[[:Category:HoChe Yu of Hsinchu (TW)|HoChe Yu of Hsinchu (TW)]][[Category:HoChe Yu of Hsinchu (TW)]]

[[:Category:Fong-Yuan Chang of Hsinchu (TW)|Fong-Yuan Chang of Hsinchu (TW)]][[Category:Fong-Yuan Chang of Hsinchu (TW)]]

[[:Category:XinYong Wang of Hsinchu (TW)|XinYong Wang of Hsinchu (TW)]][[Category:XinYong Wang of Hsinchu (TW)]]

[[:Category:Chih-Liang Chen of Hsinchu (TW)|Chih-Liang Chen of Hsinchu (TW)]][[Category:Chih-Liang Chen of Hsinchu (TW)]]

[[:Category:Tzu-Heng Chang of Hsinchu (TW)|Tzu-Heng Chang of Hsinchu (TW)]][[Category:Tzu-Heng Chang of Hsinchu (TW)]]

==ELECTROSTATIC DISCHARGE PROTECTION CELL AND ANTENNA INTEGRATED WITH THROUGH SILICON VIA - A simplified explanation of the abstract==


This abstract first appeared for US patent application 17480329 titled 'ELECTROSTATIC DISCHARGE PROTECTION CELL AND ANTENNA INTEGRATED WITH THROUGH SILICON VIA

==Simplified Explanation==

The patent application describes a semiconductor device that includes a through-silicon via (TSV) in a substrate, an ESD cell, an antenna pad, and an antenna. 

* The TSV is a vertical connection that extends through the substrate.
* The ESD cell is located near one end of the TSV and includes a set of diodes connected in parallel.
* The antenna pad is connected to the other end of the TSV.
* The antenna is connected to the antenna pad and extends in a direction parallel to the TSV.
* A conductive pillar is also included, which runs parallel to the TSV on the same side of the substrate as the antenna pad.
* One end of the conductive pillar is connected to the antenna pad, while the other end is connected to the set of diodes in the ESD cell.

Potential applications of this technology:

* Semiconductor devices with improved ESD protection and wireless communication capabilities.
* Integration of antennas and ESD protection in a compact and efficient manner.

Problems solved by this technology:

* Provides a solution for integrating ESD protection and antennas in a semiconductor device.
* Enables efficient signal transmission and protection against electrostatic discharge.

Benefits of this technology:

* Compact design that saves space in semiconductor devices.
* Enhanced ESD protection and wireless communication capabilities.
* Improved signal transmission efficiency.


==Original Abstract Submitted==

A semiconductor device includes a through-silicon via (TSV) in a TSV zone in a substrate and the TSV extends through the substrate; an ESD cell proximal to a first end of the TSV and in contact with the TSV zone, the ESD cell including a set of diodes electrically connected in parallel to each other; an antenna pad electrically connected to a second end of the TSV; and an antenna electrically connected to the antenna pad and extending in a first direction, the first direction is parallel to a major axis of the TSV. The semiconductor device includes a conductive pillar extending parallel to the TSV at a same side of the substrate as the antenna pad, wherein a first end of the conductive pillar electrically connects to the antenna pad, and a second end of the conductive pillar electrically connects to the set of diodes of the ESD cell.



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