View source for 17461184. SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)

=SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF=


==Organization Name==

[[:Category:TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.|TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.]]


[[Category:TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.]]

==Inventor(s)==

[[:Category:Kuei-Yu Kao of Hsinchu (TW)|Kuei-Yu Kao of Hsinchu (TW)]][[Category:Kuei-Yu Kao of Hsinchu (TW)]]

[[:Category:Shih-Yao Lin of New Taipei City (TW)|Shih-Yao Lin of New Taipei City (TW)]][[Category:Shih-Yao Lin of New Taipei City (TW)]]

[[:Category:Chen-Ping Chen of Toucheng Township (TW)|Chen-Ping Chen of Toucheng Township (TW)]][[Category:Chen-Ping Chen of Toucheng Township (TW)]]

[[:Category:Chih-Chung Chiu of Hsinchu (TW)|Chih-Chung Chiu of Hsinchu (TW)]][[Category:Chih-Chung Chiu of Hsinchu (TW)]]

[[:Category:Chen-Yui Yang of Hsinchu (TW)|Chen-Yui Yang of Hsinchu (TW)]][[Category:Chen-Yui Yang of Hsinchu (TW)]]

[[:Category:Ke-Chia Tseng of Hsinchu (TW)|Ke-Chia Tseng of Hsinchu (TW)]][[Category:Ke-Chia Tseng of Hsinchu (TW)]]

[[:Category:Hsien-Chung Huang of Hsinchu (TW)|Hsien-Chung Huang of Hsinchu (TW)]][[Category:Hsien-Chung Huang of Hsinchu (TW)]]

[[:Category:Chih-Han Lin of Hsinchu City (TW)|Chih-Han Lin of Hsinchu City (TW)]][[Category:Chih-Han Lin of Hsinchu City (TW)]]

[[:Category:Ming-Ching Chang of Hsinchu City (TW)|Ming-Ching Chang of Hsinchu City (TW)]][[Category:Ming-Ching Chang of Hsinchu City (TW)]]

[[:Category:Chao-Cheng Chen of Hsinchu City (TW)|Chao-Cheng Chen of Hsinchu City (TW)]][[Category:Chao-Cheng Chen of Hsinchu City (TW)]]

==SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF - A simplified explanation of the abstract==


This abstract first appeared for US patent application 17461184 titled 'SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF

==Simplified Explanation==

The patent application describes a semiconductor device that consists of multiple layers separated vertically. It also includes an active gate structure with a lower and upper portion. The lower portion wraps around each of the channel layers. A gate spacer extends along the sidewall of the upper portion of the active gate structure, and it has a bottom surface. Additionally, a dummy gate dielectric layer is placed between the gate spacer and the topmost channel layer. The dummy gate dielectric layer is in contact with the top surface of the topmost channel layer, the bottom surface of the gate spacer, and the sidewall of the gate structure.

* The semiconductor device has multiple vertically separated channel layers.
* An active gate structure with a lower and upper portion wraps around each channel layer.
* A gate spacer extends along the sidewall of the upper portion of the active gate structure.
* A dummy gate dielectric layer is placed between the gate spacer and the topmost channel layer.
* The dummy gate dielectric layer is in contact with the top surface of the topmost channel layer, the bottom surface of the gate spacer, and the sidewall of the gate structure.

== Potential Applications ==
* This semiconductor device could be used in various electronic devices such as smartphones, tablets, and computers.
* It can be applied in the manufacturing of high-performance integrated circuits.

== Problems Solved ==
* The design of the semiconductor device allows for better control and manipulation of the channel layers.
* The use of the gate spacer and dummy gate dielectric layer improves the performance and efficiency of the device.

== Benefits ==
* The vertical separation of channel layers provides more flexibility in designing and optimizing the device.
* The active gate structure and gate spacer enhance the control and functionality of the semiconductor device.
* The use of the dummy gate dielectric layer improves the overall performance and efficiency of the device.


==Original Abstract Submitted==

A semiconductor device includes a plurality of channel layers vertically separated from one another. The semiconductor device also includes an active gate structure comprising a lower portion and an upper portion. The lower portion wraps around each of the plurality of channel layers. The semiconductor device further includes a gate spacer extending along a sidewall of the upper portion of the active gate structure. The gate spacer has a bottom surface. Moreover, a dummy gate dielectric layer is disposed between the gate spacer and a topmost channel layer of plurality of channel layers. The dummy gate dielectric layer is in contact with a top surface of the topmost channel layer, the bottom surface of the gate spacer, and the sidewall of the gate structure.



[[Category:H01L29/66]]
[[Category:H01L29/423]]
[[Category:H01L21/8234]]
[[Category:H01L29/786]]