View source for 17458884. SEMICONDUCTOR DEVICE STRUCTURE HAVING AIR GAP AND METHODS OF FORMING THE SAME simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)

=SEMICONDUCTOR DEVICE STRUCTURE HAVING AIR GAP AND METHODS OF FORMING THE SAME=


==Organization Name==

[[:Category:TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.|TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.]]


[[Category:TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.]]

==Inventor(s)==

[[:Category:Ting-Ya Lo of Hsinchu (TW)|Ting-Ya Lo of Hsinchu (TW)]][[Category:Ting-Ya Lo of Hsinchu (TW)]]

[[:Category:Cheng-Chin Lee of Taipei (TW)|Cheng-Chin Lee of Taipei (TW)]][[Category:Cheng-Chin Lee of Taipei (TW)]]

[[:Category:Shao-Kuan Lee of Kaohsiung (TW)|Shao-Kuan Lee of Kaohsiung (TW)]][[Category:Shao-Kuan Lee of Kaohsiung (TW)]]

[[:Category:Chi-Lin Teng of Taichung (TW)|Chi-Lin Teng of Taichung (TW)]][[Category:Chi-Lin Teng of Taichung (TW)]]

[[:Category:Hsin-Yen Huang of New Taipei (TW)|Hsin-Yen Huang of New Taipei (TW)]][[Category:Hsin-Yen Huang of New Taipei (TW)]]

[[:Category:Hsiaokang Chang of Hsinchu (TW)|Hsiaokang Chang of Hsinchu (TW)]][[Category:Hsiaokang Chang of Hsinchu (TW)]]

[[:Category:Shau-Lin Shue of Hsinchu (TW)|Shau-Lin Shue of Hsinchu (TW)]][[Category:Shau-Lin Shue of Hsinchu (TW)]]

==SEMICONDUCTOR DEVICE STRUCTURE HAVING AIR GAP AND METHODS OF FORMING THE SAME - A simplified explanation of the abstract==


This abstract first appeared for US patent application 17458884 titled 'SEMICONDUCTOR DEVICE STRUCTURE HAVING AIR GAP AND METHODS OF FORMING THE SAME

==Simplified Explanation==

The patent application describes an interconnect structure that includes several layers and features. 

* The structure includes a dielectric layer, a first conductive feature, and a capping layer with three portions.
* The capping layer has a first portion, a second portion, and a third portion that connects the first and second portions. The third portion is in contact with the dielectric layer.
* A support layer is in contact with the first and second portions of the capping layer.
* A first conductive layer is disposed over the first conductive feature, and a second conductive layer is disposed over the dielectric layer.
* A two-dimensional (2D) material layer is in contact with the top surface of the first conductive layer.
* The support layer, the first portion, the second portion, and the third portion create an air gap between the first and second conductive layers.

Potential applications of this technology:

* Integrated circuits
* Microprocessors
* Electronic devices

Problems solved by this technology:

* Improved interconnect structure for electronic devices
* Enhanced performance and reliability of integrated circuits

Benefits of this technology:

* Reduced resistance and capacitance in interconnects
* Improved signal transmission and speed
* Enhanced overall performance of electronic devices


==Original Abstract Submitted==

An interconnect structure is provided. The structure includes a dielectric layer, a first conductive feature disposed in the dielectric layer, a capping layer having a first portion, a second portion opposing the first portion, and a third portion connecting the first portion and the second portion, wherein the third portion is in contact with the dielectric layer. The structure also includes a support layer in contact with the first and second portions of the capping layer, a first conductive layer disposed over the first conductive feature, a second conductive layer disposed over the dielectric layer, and a two-dimensional (2D) material layer in contact with a top surface of the first conductive layer, wherein the support layer, the first portion, the second portion, and the third portion define an air gap, and the air gap is disposed between the first conductive layer and the second conductive layer.



[[Category:H01L21/768]]
[[Category:H01L23/522]]