17457565. TOP ELECTRODE TO METAL LINE CONNECTION FOR MAGNETO-RESISTIVE RANDOM-ACCESS MEMORY STACK HEIGHT REDUCTION simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
Contents
- 1 TOP ELECTRODE TO METAL LINE CONNECTION FOR MAGNETO-RESISTIVE RANDOM-ACCESS MEMORY STACK HEIGHT REDUCTION
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 TOP ELECTRODE TO METAL LINE CONNECTION FOR MAGNETO-RESISTIVE RANDOM-ACCESS MEMORY STACK HEIGHT REDUCTION - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Original Abstract Submitted
TOP ELECTRODE TO METAL LINE CONNECTION FOR MAGNETO-RESISTIVE RANDOM-ACCESS MEMORY STACK HEIGHT REDUCTION
Organization Name
INTERNATIONAL BUSINESS MACHINES CORPORATION
Inventor(s)
Ruilong Xie of Niskayuna NY (US)
Tsung-Sheng Kang of Ballston Lake NY (US)
Alexander Reznicek of Troy NY (US)
Chih-Chao Yang of Glenmont NY (US)
TOP ELECTRODE TO METAL LINE CONNECTION FOR MAGNETO-RESISTIVE RANDOM-ACCESS MEMORY STACK HEIGHT REDUCTION - A simplified explanation of the abstract
This abstract first appeared for US patent application 17457565 titled 'TOP ELECTRODE TO METAL LINE CONNECTION FOR MAGNETO-RESISTIVE RANDOM-ACCESS MEMORY STACK HEIGHT REDUCTION
Simplified Explanation
The abstract describes a magneto-resistive random access memory (MRAM) device that includes a top electrode connected to a conductive interconnect through a metal capping layer. The metal capping layer is located above the top surface and sidewalls of the top electrode, while the conductive interconnect is located on the opposite sidewalls of the metal capping layer, with its top surface being coplanar with the top surface of the metal capping layer.
- The MRAM device includes a top electrode, conductive interconnect, and metal capping layer.
- The metal capping layer is positioned above the top surface and sidewalls of the top electrode.
- The conductive interconnect is located on the opposite sidewalls of the metal capping layer.
- The top surface of the conductive interconnect is coplanar with the top surface of the metal capping layer.
Potential Applications
- Memory devices: The MRAM device can be used in various memory applications, such as computer systems, mobile devices, and embedded systems.
- Non-volatile storage: MRAM offers non-volatile storage capabilities, allowing data to be retained even when power is turned off.
- High-speed operation: MRAM devices can provide fast read and write speeds, making them suitable for applications that require quick data access.
Problems Solved
- Integration challenges: The design of the MRAM device addresses the challenge of integrating the top electrode, conductive interconnect, and metal capping layer in a compact and efficient manner.
- Sidewall connection: The device solves the problem of connecting the conductive interconnect to the top electrode through the sidewalls, ensuring proper electrical connectivity.
Benefits
- Compact design: The arrangement of the top electrode, conductive interconnect, and metal capping layer allows for a compact and space-efficient MRAM device.
- Improved performance: The coplanar alignment of the top surface of the conductive interconnect and metal capping layer helps optimize the device's performance.
- Enhanced reliability: The proper electrical connection between the top electrode and conductive interconnect ensures reliable operation of the MRAM device.
Original Abstract Submitted
A magneto-resistive random access memory device includes a top electrode electrically connected to a conductive interconnect through a metal capping layer located above a top surface and opposite sidewalls of the top electrode, the conductive interconnect is located on opposite sidewalls of the metal capping layer with a top surface of the metal capping layer being coplanar with a top surface of the conductive interconnect.
