View source for 17456016. ANTI-FUSE WITH LATERALLY EXTENDED LINER simplified abstract (International Business Machines Corporation)

=ANTI-FUSE WITH LATERALLY EXTENDED LINER=


==Organization Name==

[[:Category:International Business Machines Corporation|International Business Machines Corporation]]


[[Category:International Business Machines Corporation]]

==Inventor(s)==

[[:Category:CHANRO Park of CLIFTON PARK NY (US)|CHANRO Park of CLIFTON PARK NY (US)]][[Category:CHANRO Park of CLIFTON PARK NY (US)]]

[[:Category:Koichi Motoyama of Clifton Park NY (US)|Koichi Motoyama of Clifton Park NY (US)]][[Category:Koichi Motoyama of Clifton Park NY (US)]]

[[:Category:Kenneth Chun Kuen Cheng of Shatin (HK)|Kenneth Chun Kuen Cheng of Shatin (HK)]][[Category:Kenneth Chun Kuen Cheng of Shatin (HK)]]

[[:Category:Chih-Chao Yang of Glenmont NY (US)|Chih-Chao Yang of Glenmont NY (US)]][[Category:Chih-Chao Yang of Glenmont NY (US)]]

==ANTI-FUSE WITH LATERALLY EXTENDED LINER - A simplified explanation of the abstract==


This abstract first appeared for US patent application 17456016 titled 'ANTI-FUSE WITH LATERALLY EXTENDED LINER

==Simplified Explanation==

The patent application describes a structure consisting of multiple layers on top of a substrate, including a capping layer, a low-k dielectric layer, and one or more trenches. Each trench has the same depth and is composed of a barrier layer, a liner layer, and a metal layer.

* The structure includes a capping layer on top of a substrate.
* A first low-k dielectric layer is placed on top of the capping layer.
* One or more trenches are present within the first low-k dielectric layer.
* Each trench has the same depth.
* Each trench consists of a barrier layer, a liner layer, and a metal layer.

== Potential Applications ==
This technology has potential applications in various fields, including:

* Semiconductor manufacturing
* Integrated circuit fabrication
* Nanoelectronics

== Problems Solved ==
The patent application addresses the following problems:

* Improving the performance and reliability of semiconductor devices.
* Reducing signal interference and crosstalk between components.
* Enhancing the overall efficiency and speed of electronic systems.

== Benefits ==
The technology described in the patent application offers several benefits:

* Enhanced electrical performance of semiconductor devices.
* Reduced power consumption and improved energy efficiency.
* Increased integration density and miniaturization of electronic components.
* Improved signal integrity and reduced noise interference.


==Original Abstract Submitted==

A capping layer is on top of a substrate. A first low-k dielectric layer is on top of the capping layer. One or more trenches are within the first low-k dielectric layer. Each of the one or more trenches have a same depth. Each trench of the one or more trenches include a barrier layer on top of the first low-k dielectric layer, a liner layer and a metal layer on top of the liner layer.



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