View source for 17455941. STACKED NANOSHEET DEVICES WITH MATCHED THRESHOLD VOLTAGES FOR NFET/PFET simplified abstract (International Business Machines Corporation)

=STACKED NANOSHEET DEVICES WITH MATCHED THRESHOLD VOLTAGES FOR NFET/PFET=


==Organization Name==

[[:Category:International Business Machines Corporation|International Business Machines Corporation]]


[[Category:International Business Machines Corporation]]

==Inventor(s)==

[[:Category:Heng Wu of Guilderland NY (US)|Heng Wu of Guilderland NY (US)]][[Category:Heng Wu of Guilderland NY (US)]]

[[:Category:Julien Frougier of Albany NY (US)|Julien Frougier of Albany NY (US)]][[Category:Julien Frougier of Albany NY (US)]]

[[:Category:Chen Zhang of Guilderland NY (US)|Chen Zhang of Guilderland NY (US)]][[Category:Chen Zhang of Guilderland NY (US)]]

[[:Category:ZUOGUANG Liu of Schenectady NY (US)|ZUOGUANG Liu of Schenectady NY (US)]][[Category:ZUOGUANG Liu of Schenectady NY (US)]]

[[:Category:Ruilong Xie of Niskayuna NY (US)|Ruilong Xie of Niskayuna NY (US)]][[Category:Ruilong Xie of Niskayuna NY (US)]]

[[:Category:Alexander Reznicek of Troy NY (US)|Alexander Reznicek of Troy NY (US)]][[Category:Alexander Reznicek of Troy NY (US)]]

==STACKED NANOSHEET DEVICES WITH MATCHED THRESHOLD VOLTAGES FOR NFET/PFET - A simplified explanation of the abstract==


This abstract first appeared for US patent application 17455941 titled 'STACKED NANOSHEET DEVICES WITH MATCHED THRESHOLD VOLTAGES FOR NFET/PFET

==Simplified Explanation==

The abstract describes a semiconductor device that consists of two nano devices stacked on top of each other. The lower nano device is made up of multiple stacked first nano sheets, which are spaced apart from each other by a certain distance. The upper nano device is made up of multiple stacked second nano sheets, which are spaced apart from each other by a larger distance than the first nano sheets.

* The semiconductor device consists of a lower nano device and an upper nano device.
* The lower nano device is composed of stacked first nano sheets.
* The first nano sheets are spaced apart from each other by a specific distance.
* The upper nano device is composed of stacked second nano sheets.
* The second nano sheets are spaced apart from each other by a larger distance than the first nano sheets.

Potential applications of this technology:

* Integrated circuits
* Transistors
* Memory devices
* Sensors
* Optoelectronic devices

Problems solved by this technology:

* Improved performance and efficiency of semiconductor devices
* Enhanced functionality and miniaturization of electronic components
* Increased data storage capacity and processing speed

Benefits of this technology:

* Higher density of electronic components on a chip
* Reduced power consumption and heat generation
* Faster data transfer and processing capabilities
* Improved reliability and durability of semiconductor devices


==Original Abstract Submitted==

A semiconductor device includes a lower nano device that includes a plurality of stacked first nano sheets, where the first nano sheets are spaced apart from each other a first distance. An upper nano device that includes a plurality of stacked second nano sheets, where the second nano sheets are spaced apart from each other a second distance, where the second distance is larger than the first distance.



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