US Patent Application 18361677. Metal/Dielectric/Metal Hybrid Hard Mask To Define Ultra-Large Height Top Electrode For Sub 60nm MRAM Devices simplified abstract
Metal/Dielectric/Metal Hybrid Hard Mask To Define Ultra-Large Height Top Electrode For Sub 60nm MRAM Devices
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.==Inventor(s)==
[[Category:Yi Yang of Fremont CA (US)]]
[[Category:Yu-Jen Wang of San Jose CA (US)]]
Metal/Dielectric/Metal Hybrid Hard Mask To Define Ultra-Large Height Top Electrode For Sub 60nm MRAM Devices - A simplified explanation of the abstract
This abstract first appeared for US patent application 18361677 titled 'Metal/Dielectric/Metal Hybrid Hard Mask To Define Ultra-Large Height Top Electrode For Sub 60nm MRAM Devices
Simplified Explanation
The patent application describes a method to create an ultra-large height top electrode for MRAM (Magnetic Random Access Memory) using a unique combination of materials for the hard mask stack.
- The method involves using a thin metal layer, a thick dielectric layer, and another thick metal layer as the hard mask stack.
- The etching parameters are carefully selected to ensure that the dielectric layer is etched quickly, while the metal layers above and below have an extremely low etch rate.
- The thick dielectric layer provides protection, allowing the metal hard mask to be etched with high integrity.
- This process enables the creation of a large height top electrode for MRAM, which is beneficial for improving the performance and capacity of MRAM devices.
Original Abstract Submitted
An ultra-large height top electrode for MRAM is achieved by employing a novel thin metal/thick dielectric/thick metal hybrid hard mask stack. Etching parameters are chosen to etch the dielectric quickly but to have an extremely low etch rate on the metals above and underneath. Because of the protection of the large thickness of the dielectric layer, the ultra-large height metal hard mask is etched with high integrity, eventually making a large height top electrode possible.
