US Patent Application 18353569. METHOD FOR MANUFACTURING MEMORY DEVICE simplified abstract
Contents
METHOD FOR MANUFACTURING MEMORY DEVICE
Organization Name
Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor(s)
Ya-Jui Tsou of Taichung City (TW)
Zong-You Luo of Taoyuan City (TW)
Chee-Wee Liu of Taipei City (TW)
Shao-Yu Lin of Taichung City (TW)
Liang-Chor Chung of Hsinchu County (TW)
Chih-Lin Wang of Hsinchu County (TW)
METHOD FOR MANUFACTURING MEMORY DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18353569 titled 'METHOD FOR MANUFACTURING MEMORY DEVICE
Simplified Explanation
The patent application describes a method for forming a memory stack on a substrate.
- The memory stack is covered with a dielectric layer.
- An opening is created in the dielectric layer, but it does not expose the memory stack.
- A spin-orbit-torque (SOT) layer is formed within the opening.
- A free layer is formed over the dielectric layer to connect the memory stack and the SOT layer.
Original Abstract Submitted
A method includes forming a memory stack over a substrate. A dielectric layer is deposited to cover the memory stack. An opening is formed in the dielectric layer. The opening does not expose the memory stack. A spin-orbit-torque (SOT) layer is formed in the opening. A free layer is formed over the dielectric layer to interconnect the memory stack and the SOT layer.
