US Patent Application 18343687. FERROELECTRIC MFM INDUCTOR AND RELATED CIRCUITS simplified abstract
Contents
FERROELECTRIC MFM INDUCTOR AND RELATED CIRCUITS
Organization Name
Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor(s)
Miin-Jang Chen of Hsinchu (TW)
Po-Hsien Cheng of Hsinchu (TW)
FERROELECTRIC MFM INDUCTOR AND RELATED CIRCUITS - A simplified explanation of the abstract
This abstract first appeared for US patent application 18343687 titled 'FERROELECTRIC MFM INDUCTOR AND RELATED CIRCUITS
Simplified Explanation
The patent application describes a MFM (Metal-Film-Metal) structure that consists of a resistance component, an inductance component, and a capacitance component.
- The MFM device functions as a series LC circuit with the resistance component connected in parallel with the capacitance component.
- The MFM structure can be utilized as a series LC resonant circuit, band-pass circuit, band-stop circuit, low-pass filter, high-pass filter, oscillators, or negative capacitors.
Original Abstract Submitted
Techniques in accordance with embodiments described herein are directed to a MFM structure that includes a resistance component, an inductance component and a capacitance component. The MFM device is equivalent to a series LC circuit with the resistance component coupled in parallel with the capacitance component. The MFM structure is used as a series LC resonant circuit, band-pass circuit, band-stop circuit, low-pass filter, high-pass filter, oscillators, or negative capacitors.
