US Patent Application 18354768. INTEGRATED CIRCUIT AND METHOD FOR MANUFACTURING THE SAME simplified abstract
Contents
INTEGRATED CIRCUIT AND METHOD FOR MANUFACTURING THE SAME
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Sheng-Hung Shih of Hsinchu (TW)
INTEGRATED CIRCUIT AND METHOD FOR MANUFACTURING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18354768 titled 'INTEGRATED CIRCUIT AND METHOD FOR MANUFACTURING THE SAME
Simplified Explanation
- The patent application describes a semiconductor device that includes a semiconductor substrate, a memory gate, and a data storage element. - The semiconductor substrate has a memory well with two source/drain regions and a channel region between them. - The memory gate is positioned above the channel region. - The data storage element is made of a ferroelectric material and is placed around the memory gate to separate it from the channel region.
- The semiconductor device includes a memory gate and a data storage element.
- The memory gate is located above the channel region of the semiconductor substrate.
- The data storage element is made of a ferroelectric material.
- The data storage element surrounds the memory gate, providing separation from the channel region.
- The semiconductor substrate has a memory well with two source/drain regions.
- The memory gate and data storage element combination improves the performance and functionality of the semiconductor device.
Original Abstract Submitted
A semiconductor device includes a semiconductor substrate, a memory gate, and a data storage element. The semiconductor substrate includes a memory well which has two source/drain regions and a channel region between the source/drain regions. The memory gate is disposed above the channel region. The data storage element includes a ferroelectric material, and is disposed around the memory gate to separate the memory gate from the channel region.
