18099357. SEMICONDUCTOR DEVICE AND SEMICONDUCTOR MANUFACTURING METHOD THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
Contents
- 1 SEMICONDUCTOR DEVICE AND SEMICONDUCTOR MANUFACTURING METHOD THEREOF
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR DEVICE AND SEMICONDUCTOR MANUFACTURING METHOD THEREOF - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
SEMICONDUCTOR DEVICE AND SEMICONDUCTOR MANUFACTURING METHOD THEREOF
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Wen-Chih Chiou of Hsinchu (TW)
SEMICONDUCTOR DEVICE AND SEMICONDUCTOR MANUFACTURING METHOD THEREOF - A simplified explanation of the abstract
This abstract first appeared for US patent application 18099357 titled 'SEMICONDUCTOR DEVICE AND SEMICONDUCTOR MANUFACTURING METHOD THEREOF
Simplified Explanation
The semiconductor manufacturing method described in the abstract involves forming a taper structure by bonding a first semiconductor element with a first bonding film to a second semiconductor element with a second bonding film. An oxide layer is then filled to surround the bonded elements.
- First semiconductor element with a first bonding film is formed
- Taper structure is formed with wide portion from first bonding film and narrow portion from first semiconductor element
- Second semiconductor element with a second bonding film is formed
- First and second semiconductor elements are bonded by bonding the first and second bonding films
- Oxide layer is filled to surround the bonded elements
Potential Applications
The technology described in this patent application could be applied in the manufacturing of advanced semiconductor devices, such as integrated circuits, sensors, and microprocessors.
Problems Solved
This technology solves the problem of efficiently bonding semiconductor elements with different structures, allowing for the creation of more complex and advanced semiconductor devices.
Benefits
The benefits of this technology include improved performance and reliability of semiconductor devices, as well as potentially reducing manufacturing costs and increasing production efficiency.
Potential Commercial Applications
The potential commercial applications of this technology include the semiconductor industry, electronics manufacturing, and research and development of new semiconductor devices.
Possible Prior Art
One possible prior art for this technology could be the use of bonding films in semiconductor manufacturing processes to facilitate the bonding of different semiconductor elements.
Unanswered Questions
How does this technology compare to existing methods of bonding semiconductor elements?
This technology appears to offer a more efficient and reliable method of bonding semiconductor elements with different structures, potentially leading to improved performance and reduced manufacturing costs.
What are the specific semiconductor devices that could benefit most from this technology?
This technology could benefit a wide range of semiconductor devices, including integrated circuits, sensors, and microprocessors. The specific devices that could benefit the most would likely be those with complex structures that require precise bonding of different semiconductor elements.
Original Abstract Submitted
A semiconductor device and a semiconductor manufacturing method thereof are provided. The semiconductor manufacturing method includes the following streps. A first semiconductor element with a first bonding film is formed. The first bonding film is formed on a first side of the first semiconductor element. The first semiconductor element and the first bonding film form a taper structure. The first bonding film forms a wide portion of the taper structure. The first semiconductor element forms a narrow portion of the taper structure. A second semiconductor element with a second bonding film is formed. The second bonding film is formed on the second semiconductor element. The first semiconductor element and the second semiconductor element are bonded by bonding the first bonding film and the second bonding film. An oxide layer is filled to surround the first semiconductor element and the first bonding film.
