Micron technology, inc. (20240130143). MEMORY AND STORAGE ON A SINGLE CHIP simplified abstract

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MEMORY AND STORAGE ON A SINGLE CHIP

Organization Name

micron technology, inc.

Inventor(s)

Innocenzo Tortorelli of Cernusco sul Naviglio (MI) (IT)

Agostino Pirovano of Milano (MI) (IT)

[[:Category:Matteo Impal� of Milano (MI) (IT)|Matteo Impal� of Milano (MI) (IT)]][[Category:Matteo Impal� of Milano (MI) (IT)]]

Mattia Robustelli of Milano (MI) (IT)

Fabio Pellizzer of Boise ID (US)

MEMORY AND STORAGE ON A SINGLE CHIP - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240130143 titled 'MEMORY AND STORAGE ON A SINGLE CHIP

Simplified Explanation

The abstract describes a patent application for a single memory chip that combines memory and storage capabilities using two different chalcogenide materials. The process involves forming memory and storage cells on the chip independently addressable via wordline and bitline selection.

  • Chalcogenide materials provide flexibility in cell performance by changing material composition.
  • One type of chalcogenide material is used for memory cells, while another type is used for storage cells.
  • The process includes forming openings in a starting structure and performing etching and deposition steps to create memory and storage cells with different chalcogenide compositions.
  • Memory and storage cells are independently addressable via wordline and bitline selection.

Potential Applications

The technology could be applied in:

  • Smartphones
  • Laptops
  • IoT devices

Problems Solved

  • Integration of memory and storage capabilities on a single chip
  • Flexibility in cell performance with chalcogenide materials

Benefits

  • Improved efficiency in memory and storage functions
  • Enhanced performance in electronic devices

Potential Commercial Applications

Optimizing Memory and Storage Capabilities in Electronic Devices

Possible Prior Art

Prior art in the field of memory and storage integration technologies.

Unanswered Questions

How does the use of two different chalcogenide materials impact the overall performance of the memory chip?

The abstract does not provide specific details on the performance implications of using two different chalcogenide materials for memory and storage cells.

Are there any limitations or challenges in implementing this technology on a larger scale?

The abstract does not address any potential limitations or challenges that may arise when scaling up the production of memory chips with integrated memory and storage capabilities.


Original Abstract Submitted

a single memory chip including both memory and storage capabilities on the single chip and accompanying process for forming a memory array including both capabilities is disclosed. in particular, the single chip may incorporate the use of two different chalcogenide materials deposited thereon to implement the memory and storage capabilities. chalcogenide materials provide flexibility on cell performance, such as by changing the chalcogenide material composition. for the single memory chip, one type of chalcogenide material may be utilized to create memory cells and another type of chalcogenide material may be utilized to create storage cells. the process for forming the memory array includes forming first and second openings in a starting structure and performing a series of etching and deposition steps on the structure to form the memory and storage cells using the two different chalcogenide compositions. the memory and storage cells are independently addressable via wordline and bitline selection.