Samsung electronics co., ltd. (20240128347). SEMICONDUCTOR DEVICE simplified abstract
Contents
- 1 SEMICONDUCTOR DEVICE
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240128347 titled 'SEMICONDUCTOR DEVICE
Simplified Explanation
The semiconductor device described in the abstract includes a fin-type pattern, a gate electrode, spacers, a capping structure, and an interlayer insulating film. The method of fabricating the semiconductor device involves the formation of these components in a specific sequence to achieve the desired structure.
- The fin-type pattern extends in one direction, providing a structural foundation for the device.
- The gate electrode extends in a different direction over the fin-type pattern, with spacers on its sidewalls for isolation and protection.
- The capping structure, consisting of two patterns, covers the gate electrode and spacers.
- The interlayer insulating film surrounds the spacers and capping structure, ensuring proper insulation and protection for the device.
Potential Applications
This technology can be applied in the manufacturing of advanced semiconductor devices for various electronic applications, such as mobile devices, computers, and communication systems.
Problems Solved
This technology solves the problem of improving the performance and reliability of semiconductor devices by providing a well-structured and insulated design.
Benefits
The benefits of this technology include enhanced device performance, increased reliability, and improved efficiency in semiconductor manufacturing processes.
Potential Commercial Applications
The potential commercial applications of this technology include the production of high-performance integrated circuits for consumer electronics, industrial equipment, and automotive systems.
Possible Prior Art
One possible prior art for this technology could be the use of similar structures and materials in the fabrication of semiconductor devices, but with variations in design and composition.
Unanswered Questions
How does this technology compare to existing semiconductor fabrication methods?
This article does not provide a direct comparison to existing semiconductor fabrication methods, leaving room for further analysis and evaluation of its advantages and limitations.
What are the specific performance metrics improved by this technology?
The article does not specify the exact performance metrics improved by this technology, such as speed, power consumption, or reliability, which could be important factors for potential users and manufacturers to consider.
Original Abstract Submitted
a semiconductor device and a method of fabricating a semiconductor device, the device including a fin-type pattern extending in a first direction; a gate electrode extending in a second direction over the fin-type pattern, the second direction being different from the first direction; spacers on sidewalls of the gate electrode; a capping structure on the gate electrode and the spacers, the capping structure including a first capping pattern and a second capping pattern, the second capping pattern being on the first capping pattern; and an interlayer insulating film surrounding sidewalls of each of the spacers and sidewalls of the capping structure, the interlayer insulating film being in contact with the first capping pattern.
