Samsung electronics co., ltd. (20240128332). SEMICONDUCTOR DEVICES simplified abstract
Contents
- 1 SEMICONDUCTOR DEVICES
SEMICONDUCTOR DEVICES
Organization Name
Inventor(s)
Sang Shin Jang of Suwon-si (KR)
Jong Min Baek of Suwon-si (KR)
SEMICONDUCTOR DEVICES - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240128332 titled 'SEMICONDUCTOR DEVICES
Simplified Explanation
The semiconductor device described in the abstract consists of multiple insulating layers and through vias connecting them in a specific configuration.
- The semiconductor device includes a lower insulating layer, a field insulating layer, and an upper insulating layer stacked on top of each other.
- There are three through vias - one in each insulating layer - with the second via connecting the first and third vias.
- The width of the top surface of the second via is greater than the width of the bottom surface of the first via, and the width of the bottom surface of the second via is greater than the width of the top surface of the third via. Additionally, the middle portion of the second via is wider than both the top and bottom surfaces.
Potential Applications
This technology could be applied in:
- Semiconductor manufacturing
- Integrated circuit design
- Electronics industry
Problems Solved
This technology helps in:
- Improving signal transmission
- Reducing signal interference
- Enhancing overall device performance
Benefits
The benefits of this technology include:
- Increased efficiency in semiconductor devices
- Enhanced reliability
- Improved functionality
Potential Commercial Applications
The potential commercial applications of this technology could be in:
- Consumer electronics
- Telecommunications
- Automotive industry
Possible Prior Art
One possible prior art could be the use of through vias in semiconductor devices to improve connectivity and performance.
Unanswered Questions
How does this technology compare to existing semiconductor devices in terms of performance and efficiency?
This article does not provide a direct comparison with existing semiconductor devices to evaluate performance and efficiency.
What are the specific manufacturing processes involved in creating the described semiconductor device?
The article does not delve into the detailed manufacturing processes required to implement this technology.
Original Abstract Submitted
a semiconductor device comprising: a lower insulating layer; a field insulating layer on the lower insulating layer; an upper insulating layer on the field insulating layer; a first through via in the upper insulating layer; a second through via in the field insulating layer; and a third through via in the lower insulating layer, wherein the second through via is connected to the first and third through vias, and wherein a width of a top surface of the second through via is greater than a width of a bottom surface of the first through via, a width of a bottom surface of the second through via is greater than a width of a top surface of the third through via, and a width of a middle portion of the second through via is greater than the widths of the top surface and the bottom surface of the second through via.
