US Patent Application 18013572. ELECTROMAGNETIC WAVE DETECTOR AND ELECTROMAGNETIC WAVE DETECTOR ARRAY simplified abstract

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ELECTROMAGNETIC WAVE DETECTOR AND ELECTROMAGNETIC WAVE DETECTOR ARRAY

Organization Name

Mitsubishi Electric Corporation


Inventor(s)

Shimpei Ogawa of Chiyoda-ku, Tokyo (JP)


Masaaki Shimatani of Chiyoda-ku, Tokyo (JP)


Shoichiro Fukushima of Chiyoda-ku, Tokyo (JP)


Satoshi Okuda of Chiyoda-ku, Tokyo (JP)


ELECTROMAGNETIC WAVE DETECTOR AND ELECTROMAGNETIC WAVE DETECTOR ARRAY - A simplified explanation of the abstract

  • This abstract for appeared for US patent application number 18013572 Titled 'ELECTROMAGNETIC WAVE DETECTOR AND ELECTROMAGNETIC WAVE DETECTOR ARRAY'

Simplified Explanation

The abstract describes an electromagnetic wave detector that uses a photoelectric conversion element and a plasmon filter. The photoelectric conversion element includes a semiconductor layer, an insulating layer, a two-dimensional material layer, a first electrode portion, and a second electrode portion. The plasmon filter has periodic through-holes. The detector is designed to detect electromagnetic waves by converting them into electrical signals.


Original Abstract Submitted

An electromagnetic wave detector includes at least one photoelectric conversion element and a plasmon filter disposed so as to be opposite to the at least one photoelectric conversion element. A plurality of through-holes are periodically made in the plasmon filter. The at least one photoelectric conversion element includes a semiconductor layer including a region overlapping with at least one through-hole in the plurality of through-holes in planar view, an insulating layer formed so as to cover a part of the region, a two-dimensional material layer that is disposed on the other portion of the region and the insulating layer and electrically connected to the other portion of the region, a first electrode portion electrically connected to the two-dimensional material layer, and a second electrode portion electrically connected to the semiconductor layer.

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