18368630. SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE simplified abstract (Semiconductor Energy Laboratory Co., Ltd.)

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

Organization Name

Semiconductor Energy Laboratory Co., Ltd.

Inventor(s)

Daisuke Matsubayashi of Yokohama (JP)

Yuichi Yanagisawa of Atsugi (JP)

Masahiro Takahashi of Atsugi (JP)

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 18368630 titled 'SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

Simplified Explanation

The semiconductor device described in the abstract features multiple conductors and insulators arranged in a specific configuration to achieve favorable electrical characteristics. Here are some key points to explain the patent/innovation:

• The device includes first to third conductors placed over a first oxide layer.
• First and second oxide insulators are placed over the second and third conductors, respectively.
• A second oxide is in contact with the side surface of the first oxide insulator, the side surface of the second oxide insulator, and the top surface of the first oxide.
• A first insulator is placed between the first conductor and the second oxide.
• The first oxide insulator and the second oxide insulator are not in direct contact with the conductors, insulators, or the first oxide layer.

1. 1. 1. Potential Applications

This semiconductor device configuration could be used in various electronic devices such as integrated circuits, microprocessors, and memory chips.

1. 1. 1. Problems Solved

This technology helps in improving the electrical characteristics of semiconductor devices, leading to better performance and efficiency.

1. 1. 1. Benefits

The semiconductor device with this configuration offers enhanced electrical properties, potentially leading to faster and more reliable electronic devices.

1. 1. 1. Potential Commercial Applications

The technology could find applications in the semiconductor industry for manufacturing advanced electronic components with improved performance.

1. 1. 1. Possible Prior Art

Prior art may include similar semiconductor device configurations with multiple conductors and insulators, but the specific arrangement described in this patent application may be unique.

1. 1. 1. 1. Unanswered Questions

1. 1. How does this semiconductor device configuration compare to existing industry standards?

The article does not provide a direct comparison with existing industry standards or similar technologies.

1. 1. What specific electrical characteristics are improved by the configuration described in the patent application?

The article does not detail the specific electrical characteristics that are enhanced by the semiconductor device configuration.

Original Abstract Submitted

A semiconductor device having favorable electrical characteristics is provided. The semiconductor device in which first to third conductors are placed over a first oxide; first and second oxide insulators are placed respectively over the second and third conductors; a second oxide is placed in contact with a side surface of the first oxide insulator, a side surface of the second oxide insulator, and a top surface of the first oxide; a first insulator is placed between the first conductor and the second oxide; and the first oxide insulator and the second oxide insulator are not in contact with the first to third conductors, the first insulator, and the first oxide.