17958012. AIR GAP ARCHITECTURE FOR HIGH SPEED I/O SUBSTRATE TRACES simplified abstract (Intel Corporation)
Contents
- 1 AIR GAP ARCHITECTURE FOR HIGH SPEED I/O SUBSTRATE TRACES
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 AIR GAP ARCHITECTURE FOR HIGH SPEED I/O SUBSTRATE TRACES - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
AIR GAP ARCHITECTURE FOR HIGH SPEED I/O SUBSTRATE TRACES
Organization Name
Inventor(s)
Benjamin Duong of Phoenix AZ (US)
Kristof Darmawikarta of Chandler AZ (US)
Srinivas Pietambaram of Chandler AZ (US)
AIR GAP ARCHITECTURE FOR HIGH SPEED I/O SUBSTRATE TRACES - A simplified explanation of the abstract
This abstract first appeared for US patent application 17958012 titled 'AIR GAP ARCHITECTURE FOR HIGH SPEED I/O SUBSTRATE TRACES
Simplified Explanation
The abstract describes a microelectronic integrated circuit package structure with two substrates in direct physical contact, conductive traces, and air gaps.
- First substrate with a first bond plane structure
- Second substrate with a second bond plane structure
- Direct physical contact between the first and second bond plane structures
- Conductive trace on the first substrate surface adjacent to the bonding interface
- Conductive trace over a recessed surface of the first substrate
- First air gap between the conductive trace and the recessed surface
- Second air gap between the conductive trace and the bonding interface
Potential Applications
The technology described in this patent application could be applied in various microelectronic devices, such as smartphones, tablets, laptops, and other consumer electronics.
Problems Solved
This technology helps in improving the reliability and performance of microelectronic integrated circuit package structures by providing a more stable and efficient bonding interface between substrates.
Benefits
The benefits of this technology include enhanced electrical connectivity, reduced signal interference, improved thermal management, and overall increased durability of microelectronic devices.
Potential Commercial Applications
The technology has potential commercial applications in the semiconductor industry, particularly in the manufacturing of advanced microelectronic devices for consumer electronics, automotive electronics, and industrial applications.
Possible Prior Art
One possible prior art for this technology could be the use of air gaps in microelectronic packaging to improve thermal performance and reduce signal interference. However, the direct physical contact between bond plane structures and the specific arrangement of conductive traces over recessed surfaces may be novel aspects of this innovation.
Unanswered Questions
How does this technology compare to existing microelectronic packaging solutions in terms of cost-effectiveness?
The article does not provide information on the cost implications of implementing this technology compared to traditional microelectronic packaging methods.
What are the potential challenges or limitations of integrating this technology into existing manufacturing processes?
The article does not address any potential obstacles or difficulties that may arise when incorporating this technology into current microelectronic manufacturing practices.
Original Abstract Submitted
Microelectronic integrated circuit package structures include a first substrate comprising a first bond plane structure on a surface of the first substrate, and a second substrate comprising a second bond plane structure on a surface of the second substrate, where the first and second bond plane structures are in direct physical contact. A conductive trace on the surface of the first substrate is adjacent to a bonding interface between the first and second bond plane structures and over a recessed surface of the first substrate. A first air gap is between the conductive trace and the recessed surface of the first substrate and a second air gap is between the conductive trace and the bonding interface.