US Patent Application 18087439. SEMICONDUCTOR DEVICE simplified abstract

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SEMICONDUCTOR DEVICE

Organization Name

Samsung Electronics Co., Ltd.


Inventor(s)

Kwanyeob Chae of Suwon-si (KR)


Chulwoo Kim of Seoul (KR)


Yoonjae Choi of Seoul (KR)


Kyeongkeun Kang of Suwon-si (KR)


SEMICONDUCTOR DEVICE - A simplified explanation of the abstract

  • This abstract for appeared for US patent application number 18087439 Titled 'SEMICONDUCTOR DEVICE'

Simplified Explanation

The abstract describes a semiconductor device that includes an equalizer circuit and a driver circuit. The equalizer circuit generates control signals for two bits of original data. The driver circuit consists of pull-up and pull-down transistors connected between an output node and power supply nodes. The pull-up transistors are connected in parallel and series configurations, while the pull-down transistors are connected in series. The driver circuit operates with different power supply voltages, where the second power supply voltage is lower than the first power supply voltage. The driver circuit is connected to the equalizer circuit in series.


Original Abstract Submitted

A semiconductor device is provided. The semiconductor device includes: an equalizer circuit configured to output a first control signal corresponding to a first bit of original two-bit data and a second control signal corresponding to a second bit of the original two-bit data; and a driver circuit including a plurality of pull-up transistors connected between an output node and a first power node configured to provide a first power supply voltage, and a plurality of pull-down transistors connected between the output node and a second power node configured to provide a second power supply voltage, wherein the second power supply voltage is lower than the first power supply voltage, and the driver circuit is connected to the equalizer circuit in series. The plurality of pull-up transistors includes a first pull-up transistor and a second pull-up transistor connected to each other in parallel, between the first power node and the output node, and a third pull-up transistor and a fourth pull-up transistor connected to each other in series, between the first power node and the output node.