Intel corporation (20240105804). INTEGRATED CIRCUIT STRUCTURES HAVING FIN ISOLATION REGIONS BOUND BY GATE CUTS simplified abstract

INTEGRATED CIRCUIT STRUCTURES HAVING FIN ISOLATION REGIONS BOUND BY GATE CUTS

Organization Name

intel corporation

Inventor(s)

Leonard P. Guler of Hillsboro OR (US)

Sean Pursel of Hillsboro OR (US)

Dan S. Lavric of Beaverton OR (US)

Allen B. Gardiner of Portland OR (US)

Jonathan Hinke of Portland OR (US)

Wonil Chung of Hillsboro OR (US)

INTEGRATED CIRCUIT STRUCTURES HAVING FIN ISOLATION REGIONS BOUND BY GATE CUTS - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240105804 titled 'INTEGRATED CIRCUIT STRUCTURES HAVING FIN ISOLATION REGIONS BOUND BY GATE CUTS

Simplified Explanation

The patent application describes integrated circuit structures with fin isolation regions bound by gate cuts. In a specific example, the structure includes a vertical stack of horizontal nanowires over a first sub-fin, a gate structure over the nanowires and the first sub-fin, a dielectric structure laterally spaced apart from the gate structure but on a second sub-fin, and a gate cut between the gate structure and the dielectric structure.

• Vertical stack of horizontal nanowires over a first sub-fin
• Gate structure over the nanowires and the first sub-fin
• Dielectric structure laterally spaced apart from the gate structure on a second sub-fin
• Gate cut between the gate structure and the dielectric structure

1. 1. 1. Potential Applications

This technology could be applied in advanced semiconductor manufacturing processes for high-performance integrated circuits.

1. 1. 1. Problems Solved

This innovation helps in improving the performance and efficiency of integrated circuits by providing better isolation and control over the flow of electrons.

1. 1. 1. Benefits

The benefits of this technology include enhanced circuit performance, increased energy efficiency, and potentially smaller form factors for electronic devices.

1. 1. 1. Potential Commercial Applications

This technology could find applications in the development of faster processors, memory devices, and other electronic components for various industries.

1. 1. 1. Possible Prior Art

Prior art in this field may include similar techniques for fin isolation and gate cuts in integrated circuit structures.

1. 1. 1. 1. Unanswered Questions

1. 1. 1. 1. How does this technology compare to existing methods for fin isolation in integrated circuits?

This article does not provide a direct comparison with existing methods for fin isolation in integrated circuits.

1. 1. 1. 1. What are the specific manufacturing challenges associated with implementing this technology on a large scale?

The article does not address the specific manufacturing challenges that may arise when implementing this technology on a large scale.

Original Abstract Submitted

integrated circuit structures having fin isolation regions bound by gate cuts are described. in an example, an integrated circuit structure includes a vertical stack of horizontal nanowires over a first sub-fin. a gate structure is over the vertical stack of horizontal nanowires and on the first sub-fin. a dielectric structure is laterally spaced apart from the gate structure. the dielectric structure is not over a channel structure but is on a second sub-fin. a gate cut is between the gate structure and the dielectric structure.