18264159. IMAGE SENSOR AND ELECTRONIC DEVICE simplified abstract (SONY SEMICONDUCTOR SOLUTIONS CORPORATION)

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IMAGE SENSOR AND ELECTRONIC DEVICE

Organization Name

SONY SEMICONDUCTOR SOLUTIONS CORPORATION

Inventor(s)

REN Hiyoshi of KANAGAWA (JP)

IMAGE SENSOR AND ELECTRONIC DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 18264159 titled 'IMAGE SENSOR AND ELECTRONIC DEVICE

Simplified Explanation

The present disclosure relates to an image sensor and an electronic device capable of further improving performance. An image sensor includes: a photoelectric conversion unit provided for each of a plurality of pixels arranged in a matrix on a sensor surface; a TG transistor that transfers a charge generated by photoelectric conversion in the photoelectric conversion unit to an FD node; and a TGD transistor that transfers a charge generated by photoelectric conversion in the photoelectric conversion unit to an SN node. In addition, at least a part of a predetermined number of the pixels included in an intensity sharing unit that shares and uses the FD node and a predetermined number of the pixels included in an event sharing unit that shares and uses the SN node have different sharing destinations. The present technology can be applied to, for example, an image sensor that detects occurrence of an event and acquires an image.

  • Image sensor with improved performance
  • Photoelectric conversion unit for each pixel
  • TG transistor transfers charge to FD node
  • TGD transistor transfers charge to SN node
  • Different sharing destinations for pixels in sharing units

Potential Applications

This technology can be applied in various fields such as:

  • Surveillance systems
  • Automotive cameras
  • Medical imaging devices

Problems Solved

  • Improved performance of image sensors
  • Enhanced event detection capabilities
  • Efficient charge transfer mechanisms

Benefits

  • Higher quality images
  • Increased sensitivity to events
  • Enhanced overall device performance

Potential Commercial Applications

  • Camera manufacturers
  • Security system companies
  • Medical equipment manufacturers

Possible Prior Art

One possible prior art could be the use of similar charge transfer mechanisms in image sensors, but with different sharing configurations.

Unanswered Questions

How does this technology compare to existing image sensor innovations?

This technology offers improved performance and efficiency in charge transfer mechanisms compared to traditional image sensors.

What are the specific technical specifications of the image sensor described in the patent application?

The patent application does not provide detailed technical specifications of the image sensor, such as pixel size, resolution, or sensitivity.


Original Abstract Submitted

The present disclosure relates to an image sensor and an electronic device capable of further improving performance. An image sensor includes: a photoelectric conversion unit provided for each of a plurality of pixels arranged in a matrix on a sensor surface; a TG transistor that transfers a charge generated by photoelectric conversion in the photoelectric conversion unit to an FD node; and a TGD transistor that transfers a charge generated by photoelectric conversion in the photoelectric conversion unit to an SN node. In addition, at least a part of a predetermined number of the pixels included in an intensity sharing unit that shares and uses the FD node and a predetermined number of the pixels included in an event sharing unit that shares and uses the SN node have different sharing destinations. The present technology can be applied to, for example, an image sensor that detects occurrence of an event and acquires an image.