18369321. HARDMASK STRUCTURE AND METHOD OF FORMING SEMICONDUCTOR STRUCTURE simplified abstract (NANYA TECHNOLOGY CORPORATION)
Contents
- 1 HARDMASK STRUCTURE AND METHOD OF FORMING SEMICONDUCTOR STRUCTURE
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 HARDMASK STRUCTURE AND METHOD OF FORMING SEMICONDUCTOR STRUCTURE - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
HARDMASK STRUCTURE AND METHOD OF FORMING SEMICONDUCTOR STRUCTURE
Organization Name
Inventor(s)
WEI-CHUAN Fang of NEW TAIPEI CITY (TW)
HARDMASK STRUCTURE AND METHOD OF FORMING SEMICONDUCTOR STRUCTURE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18369321 titled 'HARDMASK STRUCTURE AND METHOD OF FORMING SEMICONDUCTOR STRUCTURE
Simplified Explanation
The abstract describes a patent application for a hardmask structure and a method of forming a semiconductor structure. The hardmask structure includes a first ashable hardmask, a first dielectric antireflective coating, and a second ashable hardmask. The stress of the first ashable hardmask is between -100 MPa to 100 MPa.
- First ashable hardmask
- First dielectric antireflective coating
- Second ashable hardmask
- Stress range of first ashable hardmask: -100 MPa to 100 MPa
Potential Applications
This technology can be applied in the semiconductor industry for the fabrication of advanced semiconductor devices.
Problems Solved
1. Improved precision in semiconductor manufacturing processes. 2. Enhanced performance of semiconductor devices.
Benefits
1. Increased efficiency in semiconductor fabrication. 2. Higher quality and reliability of semiconductor structures.
Potential Commercial Applications
Optimizing Hardmask Structures for Semiconductor Fabrication
Possible Prior Art
Prior art related to hardmask structures and semiconductor fabrication processes may exist, but specific examples are not provided in the abstract.
Unanswered Questions
How does this technology compare to existing hardmask structures in terms of performance and cost-effectiveness?
The abstract does not provide a comparison with existing hardmask structures in the market.
What specific semiconductor devices or applications can benefit the most from this technology?
The abstract does not specify the targeted semiconductor devices or applications for this technology.
Original Abstract Submitted
A hardmask structure and a method of forming a semiconductor structure are provided. The hardmask structure includes a first ashable hardmask, a first dielectric antireflective coating, and a second ashable hardmask. The first dielectric antireflective coating is disposed on the first ashable hardmask. The second ashable hardmask is disposed on the first dielectric antireflective coating. A stress of the first ashable hardmask is from about −100 MPa to about 100 MPa.
