17946355. HARDMASK STRUCTURE AND METHOD OF FORMING SEMICONDUCTOR STRUCTURE simplified abstract (NANYA TECHNOLOGY CORPORATION)

HARDMASK STRUCTURE AND METHOD OF FORMING SEMICONDUCTOR STRUCTURE

Organization Name

NANYA TECHNOLOGY CORPORATION

Inventor(s)

WEI-CHUAN Fang of NEW TAIPEI CITY (TW)

HARDMASK STRUCTURE AND METHOD OF FORMING SEMICONDUCTOR STRUCTURE - A simplified explanation of the abstract

This abstract first appeared for US patent application 17946355 titled 'HARDMASK STRUCTURE AND METHOD OF FORMING SEMICONDUCTOR STRUCTURE

Simplified Explanation

The abstract describes a patent application for a hardmask structure and a method of forming a semiconductor structure. The hardmask structure includes a first ashable hardmask, a first dielectric antireflective coating, and a second ashable hardmask. The stress of the first ashable hardmask is between -100 MPa to 100 MPa.

• Explanation of the patent:

 * The patent describes a hardmask structure for semiconductor manufacturing.
 * It includes two ashable hardmasks and a dielectric antireflective coating.
 * The stress of the first ashable hardmask is controlled within a specific range.

• Potential applications of this technology:

 * Semiconductor fabrication processes
 * Photolithography in the semiconductor industry

• Problems solved by this technology:

 * Improving the precision and quality of semiconductor manufacturing
 * Enhancing the performance of semiconductor devices

• Benefits of this technology:

 * Better control over the etching process
 * Increased efficiency in semiconductor production

• Potential commercial applications of this technology:

 * Semiconductor manufacturing equipment
 * Semiconductor fabrication services

• Possible prior art:

 * Previous patents related to hardmask structures in semiconductor manufacturing

1. 1. 1. Unanswered Questions:
         1. How does this technology compare to existing hardmask structures in terms of performance and cost?

This article does not provide a direct comparison with existing hardmask structures in the semiconductor industry. Further research or testing may be needed to evaluate the performance and cost-effectiveness of this technology.

1. 1. 1. 1. What are the specific steps involved in the method of forming a semiconductor structure using this hardmask structure?

The article briefly mentions the method of forming a semiconductor structure but does not provide detailed steps. Additional information or a more in-depth explanation of the process would be helpful for understanding the practical application of this technology.

Original Abstract Submitted

A hardmask structure and a method of forming a semiconductor structure are provided. The hardmask structure includes a first ashable hardmask, a first dielectric antireflective coating, and a second ashable hardmask. The first dielectric antireflective coating is disposed on the first ashable hardmask. The second ashable hardmask is disposed on the first dielectric antireflective coating. A stress of the first ashable hardmask is from about −100 MPa to about 100 MPa.