17994858. X-RAY REFLECTOMETRY APPARATUS AND METHOD THEREOF FOR MEASURING THREE DIMENSIONAL NANOSTRUCTURES ON FLAT SUBSTRATE simplified abstract (INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE)

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X-RAY REFLECTOMETRY APPARATUS AND METHOD THEREOF FOR MEASURING THREE DIMENSIONAL NANOSTRUCTURES ON FLAT SUBSTRATE

Organization Name

INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE

Inventor(s)

Bo-Ching He of Hsinchu City (TW)

Chun-Ting Liu of Taichung City (TW)

Wei-En Fu of Yangmei City (TW)

Wen-Li Wu of Hsinchu City (TW)

X-RAY REFLECTOMETRY APPARATUS AND METHOD THEREOF FOR MEASURING THREE DIMENSIONAL NANOSTRUCTURES ON FLAT SUBSTRATE - A simplified explanation of the abstract

This abstract first appeared for US patent application 17994858 titled 'X-RAY REFLECTOMETRY APPARATUS AND METHOD THEREOF FOR MEASURING THREE DIMENSIONAL NANOSTRUCTURES ON FLAT SUBSTRATE

Simplified Explanation

The patent application describes an X-ray reflectometry apparatus and method for measuring a three-dimensional nanostructure on a flat substrate.

  • X-ray reflectometry apparatus components:
   - X-ray source for emitting X-ray
   - X-ray reflector for reflecting X-ray onto sample surface
   - 2-dimensional X-ray detector for collecting reflecting X-ray signal
   - Two-axis moving device for controlling detector movement on x-axis and z-axis

Potential Applications: This technology can be used in nanotechnology research, semiconductor manufacturing, and material science for analyzing thin films and nanostructures.

Problems Solved: This technology allows for non-destructive measurement of three-dimensional nanostructures on flat substrates with high precision and accuracy.

Benefits: - Accurate measurement of nanostructures - Non-destructive testing - High precision and resolution

Potential Commercial Applications: "Advanced Nanostructure Measurement Technology for Semiconductor Industry"

Possible Prior Art: Prior art may include other X-ray reflectometry systems used for analyzing thin films and nanostructures on flat substrates.

Unanswered Questions: 1. How does this technology compare to other methods for measuring nanostructures? 2. What are the limitations of this X-ray reflectometry apparatus in terms of sample size and material compatibility?


Original Abstract Submitted

This disclosure relates to an X-ray reflectometry apparatus and a method for measuring a three-dimensional nanostructure on a flat substrate. The X-ray reflectometry apparatus comprises an X-ray source, an X-ray reflector, a 2-dimensional X-ray detector, and a two-axis moving device. The X-ray source is for emitting X-ray. The X-ray reflector is configured for reflecting the X-ray onto a sample surface. The 2-dimensional X-ray detector is configured to collect a reflecting X-ray signal from the sample surface. The two-axis moving device is configured to control two-axis directions of the 2-dimensional X-ray detector to move on at least one of x-axis and z-axis with a formula concerning an incident angle of the X-ray with respect to the sample surface for collecting the reflecting X-ray signal.

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