18186206. SEMICONDUCTOR DEVICES AND METHODS OF FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
SEMICONDUCTOR DEVICES AND METHODS OF FORMING THE SAME
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Chao-Kai Chan of Taichung City (TW)
Chung-Hao Tsai of Changhua County (TW)
Chuei-Tang Wang of Taichung City (TW)
Wei-Ting Chen of Tainan City (TW)
SEMICONDUCTOR DEVICES AND METHODS OF FORMING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18186206 titled 'SEMICONDUCTOR DEVICES AND METHODS OF FORMING THE SAME
Simplified Explanation
The abstract describes a method of forming a semiconductor device involving the formation of a transistor, dielectric layers, metal vias, interconnect structures, and a capacitor on a substrate.
- A transistor is formed on one side of the substrate.
- A dielectric layer is formed next to the transistor.
- A metal via is formed through the dielectric layer and next to the transistor.
- An interconnect structure is formed over the substrate and connected to the transistor and metal via.
- The substrate is thinned from the other side.
- A capacitor is formed on the thinned side of the substrate.
- Another dielectric layer is formed next to the capacitor.
- A second metal via is formed through the dielectric layer and substrate, connected to the first metal via.
Potential Applications
- Semiconductor manufacturing
- Integrated circuit fabrication
- Electronic device production
Problems Solved
- Improved electrical connectivity
- Enhanced performance of semiconductor devices
- Increased efficiency in circuit design
Benefits
- Higher functionality of semiconductor devices
- Better signal transmission
- More compact and efficient circuitry
Original Abstract Submitted
A method of forming a semiconductor device is provided. A transistor is formed at a first side of the substrate and a first dielectric layer is formed aside the transistor. A first metal via is formed through the first dielectric layer and aside the transistor. A first interconnect structure is formed over the first side of the substrate and electrically connected to the transistor and the first metal via. The substrate is thinned from a second side of the substrate. A capacitor is formed at the second side of the substrate and a second dielectric layer is formed aside the capacitor. A second metal via is formed through the second dielectric layer and the substrate and electrically connected to the first metal via.
